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Novel relaxation process in strained Si/Ge superlattices grown on Ge (001)

Wegscheider, Werner and Eberl, Karl and Abstreiter, Gerhard and Cerva, H. and Oppolzer, H. (1990) Novel relaxation process in strained Si/Ge superlattices grown on Ge (001). Applied Physics Letters 57 (15), pp. 1496-1498.

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A new mode of misfit defect formation has been observed for the first time in high quality Si/Ge strained-layer superlattices grown by molecular beam epitaxy on Ge(001). In order to investigate the transition from coherent to incoherent growth we have studied a set of samples with a varying number of superlattice periods by transmission electron microscopy. High-resolution lattice imaging reveals ...


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Item type:Article
Date:6 October 1990
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
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Dewey Decimal Classification:500 Science > 530 Physics
Created at the University of Regensburg:Unknown
Deposited on:26 Oct 2009 13:22
Last modified:13 Mar 2014 11:18
Item ID:9980
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