Wegscheider, Werner and Eberl, Karl and Abstreiter, Gerhard and Cerva, H. and Oppolzer, H. (1990) Novel relaxation process in strained Si/Ge superlattices grown on Ge (001). Applied Physics Letters 57 (15), pp. 1496-1498.
Download (1MB) - Repository staff only
A new mode of misfit defect formation has been observed for the first time in high quality Si/Ge strained-layer superlattices grown by molecular beam epitaxy on Ge(001). In order to investigate the transition from coherent to incoherent growth we have studied a set of samples with a varying number of superlattice periods by transmission electron microscopy. High-resolution lattice imaging reveals that strain relaxation occurs through successive glide of 90° (a/6)<211> Shockley partial dislocations on adjacent planes. The resulting microtwins represent the only relaxation mechanism we observed in the samples. Applied Physics Letters is copyrighted by The American Institute of Physics.
|Date:||6 October 1990|
|Institutions:||Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider|
|Subjects:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited On:||26 Oct 2009 13:22|
|Last Modified:||20 Jul 2011 21:50|