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Novel relaxation process in strained Si/Ge superlattices grown on Ge (001)

Wegscheider, Werner and Eberl, Karl and Abstreiter, Gerhard and Cerva, H. and Oppolzer, H. (1990) Novel relaxation process in strained Si/Ge superlattices grown on Ge (001). Applied Physics Letters 57 (15), pp. 1496-1498.

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Abstract

A new mode of misfit defect formation has been observed for the first time in high quality Si/Ge strained-layer superlattices grown by molecular beam epitaxy on Ge(001). In order to investigate the transition from coherent to incoherent growth we have studied a set of samples with a varying number of superlattice periods by transmission electron microscopy. High-resolution lattice imaging reveals ...

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Item Type:Article
Date:6 October 1990
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1063/1.103375DOI
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:26 Oct 2009 13:22
Last Modified:13 Mar 2014 11:18
Item ID:9980
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