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Group IV element (Si, Ge and α-Sn) superlattices — low temperature MBE

Eberl, Karl and Wegscheider, Werner and Abstreiter, Gerhard (1991) Group IV element (Si, Ge and α-Sn) superlattices — low temperature MBE. Journal of Crystal Growth 111 (1-4), pp. 882-888.

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Abstract

Si/Ge and Sn/Ge heterostructures and short-period superlattices are grown by a modified molecular beam epitaxy (MBE) technique on Si and Ge substrates. Low energy electron diffraction and Auger electron spectroscopy are used in order to optimize the growth conditions with respect to interface roughness, segregation and intermixing. Transmission electron micrographs reveal that the interface ...

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Item Type:Article
Date:1 May 1991
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1016/0022-0248(91)91101-F DOI
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:26 Oct 2009 13:37
Last Modified:13 Mar 2014 11:18
Item ID:9983
Owner Only: item control page
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