Vogl, P. and Olajos, Janos and Wegscheider, Werner and Abstreiter, Gerhard (1992) Electronic structure and optical properties of short-period α-SnnGem superlattices. Surface Science 267 (1-3), pp. 83-86.
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Short period α-Sn/Ge strained layer superlattices have been prepared on Ge(001) substrates by low temperature molecular beam epitaxy. We have achieved almost defect free and thermally stable single crystalline structures. Photourrent measurements in a series of Sn1Gem(m>10) superlattices reveal a shift of the fundamental energy gap to smaller energies with decreasing Ge layer thickness m, in good agreement with band structure calculations. A direct fundamental energy gap and large direct band gap absorption is predicted for a slightly increased lateral lattice constant in α-Sn/Ge superlattices.
|Institutions:||Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider|
|Subjects:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited On:||26 Oct 2009 13:48|
|Last Modified:||20 Jul 2011 21:51|