Wegscheider, Werner and Olajos, Janos and Menczigar, U. and Dondl, W. and Abstreiter, Gerhard (1992) Fabrication and properties of epitaxially stabilized Ge / α-Sn heterostructures on Ge(001). Journal of Crystal Growth 123 (1-2), pp. 75-94.
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We have investigated the influence of the growth parameters during molecular beam epitaxy on the realizibility of diamond crystal structure Ge / α-Sn alloys and superlattices on Ge(001) substrates. The segregation behaviour of Sn during Ge overgrowth has been studied. We find that for growth temperatures higher than 300°C the incorporation rates are less than 0.005 ML-1. The low-energy electron ...
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|Institutions:||Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider|
|Subjects:||500 Science > 530 Physics|
|Created at the University of Regensburg:||Unknown|
|Deposited On:||26 Oct 2009 13:53|
|Last Modified:||13 Mar 2014 11:19|