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Fabrication and properties of epitaxially stabilized Ge / α-Sn heterostructures on Ge(001)

Wegscheider, Werner and Olajos, Janos and Menczigar, U. and Dondl, W. and Abstreiter, Gerhard (1992) Fabrication and properties of epitaxially stabilized Ge / α-Sn heterostructures on Ge(001). Journal of Crystal Growth 123 (1-2), pp. 75-94.

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Abstract

We have investigated the influence of the growth parameters during molecular beam epitaxy on the realizibility of diamond crystal structure Ge / α-Sn alloys and superlattices on Ge(001) substrates. The segregation behaviour of Sn during Ge overgrowth has been studied. We find that for growth temperatures higher than 300°C the incorporation rates are less than 0.005 ML-1. The low-energy electron ...

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Item Type:Article
Date:1992
Institutions:Physics > Institute of Experimental and Applied Physics > Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1016/0022-0248(92)90012-8DOI
Subjects:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Owner: Martin Kaiser
Deposited On:26 Oct 2009 13:53
Last Modified:13 Mar 2014 11:19
Item ID:9989
Owner Only: item control page

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