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Article

Able, Andreas and Wegscheider, Werner and Engl, Karl and Zweck, Josef (2005) Growth of crack-free GaN on Si(1 1 1) with graded AlGaN buffer layers. Journal of Crystal Growth 276 (3-4), pp. 415-418. Fulltext restricted.
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Thesis of the University of Regensburg

Able, Andreas (2005) Untersuchungen zur metallorganischen Gasphasenepitaxie von Gruppe III Nitriden auf Silizium (111). PhD, Universität Regensburg
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