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Number of items: 23.

Lohner, Andrea and Huber, W. and Ganichev, Sergey and Diener, J. and Prettl, Wilhelm (1998) Light emission of dental enamel after multiphoton excitation. Infrared Physics & Technology 39 (1), pp. 23-28.

Diener, J. and Kovalev, D. and Ben-Chorin, M. and Ganichev, Sergey and Polisski, G. and Koch, F. (1997) The recombination statistic of the visible photoluminescence of Si nanocrystalls. In: Collins, Robert W. and Fauchet, Philippe M. and Shimizu, Isamu and Vial, Jean-Claude and Toshikazu Shimada, A. Paul, (eds.) Advances in microcrystalline and nanocrystalline semiconductors - 1996. Materials Research Society symposium proceedings, 452. Materials Research Society, Pittsburgh, Pa., p. 553. ISBN 1-558-99356-8.

Diener, J. and Ben-Chorin, M. and Kovalev, D. and Ganichev, Sergey and Koch, F. (1996) Excitation of the porous silicon photoluminescence by a multiphoton vibronic process. Thin Solid Films 276 (1-2), pp. 116-119.

Diener, J. and Ben-Chorin, M. and Kovalev, D. and Ganichev, Sergey and Koch, F. (1996) Luminescence from highly excited vibronic states in porous silicon. In: 2nd Russian Conference on Physics of Semiconductors, 1996, St. Petersburg, Russia, 2.

Diener, J. and Kovalev, D. and Ben-Chorin, M. and Ganichev, Sergey and Polisski, G. and Koch, F. (1996) The recombination statistic of the visible photoluminescence of Si nanocrystalls. In: MRS Fall Meeting, Symposium Defects in Electronic Materials, 02. - 06. Dezember 1996, Boston, Massachusetts, USA.

Diener, J. and Ben-Chorin, M. and Kovalev, D. and Ganichev, Sergey and Koch, F. (1995) Light from Porous Silicon by Multiphoton Vibronic Excitation. Physical Review B 52 (12), R8617-R8620.

Ganichev, Sergey and Diener, J. and Yassievich, Irina and Prettl, Wilhelm and Meyer, B. and Benz, K. (1995) Tunnelling ionization of autolocalized DX- centers in terahertz fields. Physical Review Letters 75 (8), pp. 1590-1593.

Ganichev, Sergey and Diener, J. and Yassievich, Irina and Prettl, Wilhelm (1995) Poole-Frenkel Effect in Terahertz Electromagnetic Fields. Europhysics Letters 29 (4), pp. 315-320.

Ganichev, Sergey and Diener, J. and Yassievich, Irina and Prettl, Wilhelm and Meyer, B. and Benz, K. (1995) Direct evidence for autolocalization states of DX center in Al_{x}Ga_{(1-x)}Sb. In: Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, 1995, Berlin, Germany.

Ganichev, Sergey and Diener, J. and Yassievich, Irina and Prettl, Wilhelm and Meyer, B. and Benz, K. (1995) Direct experimental evidence of autolocalization nature of DX- centers. Material Science Forum 196-20, pp. 1079-1084.

Ganichev, Sergey and Diener, J. and Yassievich, Irina and Prettl, Wilhelm and Meyer, B. and Benz, K. (1995) Direct experimental evidence of autolocalization nature of DX- centers. In: 18th International Conference on Defects in Semiconductors, 23. - 28. Juli 1995, Sendai, Japan.

Diener, J. and Ben-Chorin, M. and Kovalev, D. and Ganichev, Sergey and Koch, F. (1995) Excitation of the porous silicon photoluminescence by a multiphoton vibronic process. In: European Materials Research Society 1995 Spring Conference, Symposium I: Porous Silicon: Material, Technology and Devices, 22. – 26. Mai 1995, Strasbourg, France.

Ben-Chorin, M. and Ganichev, Sergey and Diener, J. and Koch, F. (1995) Far and mid-infrared transient photoconductivity in porous silicon. In: 7th Brasilian Workshop on Semiconductor Physics, 16. - 21. Juli 1995, Rio de Janeiro, Brasilien.

Diener, J. and Ben-Chorin, M. and Kovalev, D. and Ganichev, Sergey and Koch, F. (1995) Luminescence from highly excited vibronic states in porous silicon. In: 7th Brasilian Workshop on Semiconductor Physics, 16. - 21. Juli 1995, Rio de Janeiro, Brasilien.

Diener, J. and Ganichev, Sergey and Ben-Chorin, M. and Petrova-Koch, V. and Koch, F. (1995) Luminescence quenching and recovery in porous Si after pulse infrared irradiation. In: MRS Fall Meeting,, 27. November - 1. Dezember 1995, Boston, Massachusetts USA.

Diener, J. and Ganichev, Sergey and Ben-Chorin, M. and Petrova-Koch, V. and Koch, F. (1995) Luminescence quenching and recovery in porous Si after pulse infrared irradiation. In: Collins, Robert W. and Tsai, Chuang and Hirose, Masataka and Koch, Frederick and Brus, Louis, (eds.) Microcrystalline and nanocrystalline semiconductors: symposium held November 29 - December 2, 1994, Boston, Massachusetts, U.S.A. Materials Research Society symposium proceedings, 358. Materials Research Society, Pittsburgh, Pa., pp. 501-506. ISBN 1-558-99259-6.

Ganichev, Sergey and Mayerhofer, B. and Diener, J. and Yassievich, Irina and Prettl, Wilhelm (1995) Poole-Frenkel Ionization of Ge:Hg in Terahertz Electromagnetic Fields. Material Science Forum 196-20, pp. 1543-1546.

Ganichev, Sergey and Mayerhofer, B. and Diener, J. and Yassievich, Irina and Prettl, Wilhelm (1995) Poole-Frenkel Ionization of Ge:Hg in Terahertz Electromagnetic Fields. In: 18th International Conference on Defects in Semiconductors, 23. - 28. Juli 1995, Sendai, Japan.

Ganichev, Sergey and Diener, J. and Prettl, Wilhelm (1994) Direct tunnel ionization of deep impurities in the electric field of far-infrared radiation. Solid State Communications 92 (11), pp. 883-887.

Ganichev, Sergey and Diener, J. and Prettl, Wilhelm (1994) Nonlinear far-infrared absorption in InSb at light impact ionization. Applied Physics Letters 64 (15), pp. 1977-1979.

Ben-Chorin, M. and Ganichev, Sergey and Diener, J. and Koch, F. (1994) Infrared photoconductivity in porous silicon. In: MRS Fall Meeting, 28. November - 2. Dezember 1994, Boston, Massachusetts, USA.

Diener, J. and Ganichev, Sergey and Ben-Chorin, M. and Koch, V. (1994) Luminescence quenching and recovery in porous Si after pulse infrared irradiation. In: MRS Fall Meeting, 28. November - 2. Dezember 1994, Boston, Massachusetts, USA.

Ganichev, Sergey and Diener, J. and Ben-Chorin, M. and Koch, F. (1994) Negative photoconductive response in porous silicon by terahertz radiation. In: MRS Fall Meeting, 28. November - 2. Dezember 1994, Boston, Massachusetts, USA.

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