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Number of items: 23.

Article

Lohner, Andrea and Huber, W. and Ganichev, Sergey and Diener, J. and Prettl, Wilhelm (1998) Light emission of dental enamel after multiphoton excitation. Infrared Physics & Technology 39 (1), pp. 23-28.

Diener, J. and Ben-Chorin, M. and Kovalev, D. and Ganichev, Sergey and Koch, F. (1996) Excitation of the porous silicon photoluminescence by a multiphoton vibronic process. Thin Solid Films 276 (1-2), pp. 116-119.

Diener, J. and Ben-Chorin, M. and Kovalev, D. and Ganichev, Sergey and Koch, F. (1995) Light from Porous Silicon by Multiphoton Vibronic Excitation. Physical Review B 52 (12), R8617-R8620.

Ganichev, Sergey and Diener, J. and Yassievich, Irina and Prettl, Wilhelm and Meyer, B. and Benz, K. (1995) Tunnelling ionization of autolocalized DX- centers in terahertz fields. Physical Review Letters 75 (8), pp. 1590-1593.

Ganichev, Sergey and Diener, J. and Yassievich, Irina and Prettl, Wilhelm (1995) Poole-Frenkel Effect in Terahertz Electromagnetic Fields. Europhysics Letters 29 (4), pp. 315-320.

Ganichev, Sergey and Diener, J. and Yassievich, Irina and Prettl, Wilhelm and Meyer, B. and Benz, K. (1995) Direct experimental evidence of autolocalization nature of DX- centers. Material Science Forum 196-20, pp. 1079-1084.

Ganichev, Sergey and Mayerhofer, B. and Diener, J. and Yassievich, Irina and Prettl, Wilhelm (1995) Poole-Frenkel Ionization of Ge:Hg in Terahertz Electromagnetic Fields. Material Science Forum 196-20, pp. 1543-1546.

Ganichev, Sergey and Diener, J. and Prettl, Wilhelm (1994) Direct tunnel ionization of deep impurities in the electric field of far-infrared radiation. Solid State Communications 92 (11), pp. 883-887.

Ganichev, Sergey and Diener, J. and Prettl, Wilhelm (1994) Nonlinear far-infrared absorption in InSb at light impact ionization. Applied Physics Letters 64 (15), pp. 1977-1979.

Book Section

Diener, J. and Kovalev, D. and Ben-Chorin, M. and Ganichev, Sergey and Polisski, G. and Koch, F. (1997) The recombination statistic of the visible photoluminescence of Si nanocrystalls. In: Collins, Robert W. and Fauchet, Philippe M. and Shimizu, Isamu and Vial, Jean-Claude and Toshikazu Shimada, A. Paul, (eds.) Advances in microcrystalline and nanocrystalline semiconductors - 1996. Materials Research Society symposium proceedings, 452. Materials Research Society, Pittsburgh, Pa., p. 553. ISBN 1-558-99356-8.

Diener, J. and Ganichev, Sergey and Ben-Chorin, M. and Petrova-Koch, V. and Koch, F. (1995) Luminescence quenching and recovery in porous Si after pulse infrared irradiation. In: Collins, Robert W. and Tsai, Chuang and Hirose, Masataka and Koch, Frederick and Brus, Louis, (eds.) Microcrystalline and nanocrystalline semiconductors: symposium held November 29 - December 2, 1994, Boston, Massachusetts, U.S.A. Materials Research Society symposium proceedings, 358. Materials Research Society, Pittsburgh, Pa., pp. 501-506. ISBN 1-558-99259-6.

Conference or Workshop Item

Diener, J. and Ben-Chorin, M. and Kovalev, D. and Ganichev, Sergey and Koch, F. (1996) Luminescence from highly excited vibronic states in porous silicon. In: 2nd Russian Conference on Physics of Semiconductors, 1996, St. Petersburg, Russia, 2.

Diener, J. and Kovalev, D. and Ben-Chorin, M. and Ganichev, Sergey and Polisski, G. and Koch, F. (1996) The recombination statistic of the visible photoluminescence of Si nanocrystalls. In: MRS Fall Meeting, Symposium Defects in Electronic Materials, 02. - 06. Dezember 1996, Boston, Massachusetts, USA.

Ganichev, Sergey and Diener, J. and Yassievich, Irina and Prettl, Wilhelm and Meyer, B. and Benz, K. (1995) Direct evidence for autolocalization states of DX center in Al_{x}Ga_{(1-x)}Sb. In: Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, 1995, Berlin, Germany.

Ganichev, Sergey and Diener, J. and Yassievich, Irina and Prettl, Wilhelm and Meyer, B. and Benz, K. (1995) Direct experimental evidence of autolocalization nature of DX- centers. In: 18th International Conference on Defects in Semiconductors, 23. - 28. Juli 1995, Sendai, Japan.

Diener, J. and Ben-Chorin, M. and Kovalev, D. and Ganichev, Sergey and Koch, F. (1995) Excitation of the porous silicon photoluminescence by a multiphoton vibronic process. In: European Materials Research Society 1995 Spring Conference, Symposium I: Porous Silicon: Material, Technology and Devices, 22. – 26. Mai 1995, Strasbourg, France.

Ben-Chorin, M. and Ganichev, Sergey and Diener, J. and Koch, F. (1995) Far and mid-infrared transient photoconductivity in porous silicon. In: 7th Brasilian Workshop on Semiconductor Physics, 16. - 21. Juli 1995, Rio de Janeiro, Brasilien.

Diener, J. and Ben-Chorin, M. and Kovalev, D. and Ganichev, Sergey and Koch, F. (1995) Luminescence from highly excited vibronic states in porous silicon. In: 7th Brasilian Workshop on Semiconductor Physics, 16. - 21. Juli 1995, Rio de Janeiro, Brasilien.

Diener, J. and Ganichev, Sergey and Ben-Chorin, M. and Petrova-Koch, V. and Koch, F. (1995) Luminescence quenching and recovery in porous Si after pulse infrared irradiation. In: MRS Fall Meeting,, 27. November - 1. Dezember 1995, Boston, Massachusetts USA.

Ganichev, Sergey and Mayerhofer, B. and Diener, J. and Yassievich, Irina and Prettl, Wilhelm (1995) Poole-Frenkel Ionization of Ge:Hg in Terahertz Electromagnetic Fields. In: 18th International Conference on Defects in Semiconductors, 23. - 28. Juli 1995, Sendai, Japan.

Ben-Chorin, M. and Ganichev, Sergey and Diener, J. and Koch, F. (1994) Infrared photoconductivity in porous silicon. In: MRS Fall Meeting, 28. November - 2. Dezember 1994, Boston, Massachusetts, USA.

Diener, J. and Ganichev, Sergey and Ben-Chorin, M. and Koch, V. (1994) Luminescence quenching and recovery in porous Si after pulse infrared irradiation. In: MRS Fall Meeting, 28. November - 2. Dezember 1994, Boston, Massachusetts, USA.

Ganichev, Sergey and Diener, J. and Ben-Chorin, M. and Koch, F. (1994) Negative photoconductive response in porous silicon by terahertz radiation. In: MRS Fall Meeting, 28. November - 2. Dezember 1994, Boston, Massachusetts, USA.

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