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Witzigmann, B. and Laino, V. and Roemer, F. and Lauterbach, C. and Schwarz, Uli and Rumbolz, C. and Schillgalies, M. and Lell, A. and Härle, V. (2007) Analysis of substrate modes in GaN/InGaN Lasers. SPIE proceedings 6468, 64680Q.

Braun, Harald and Lauterbach, C. and Schwarz, Uli and Laino, V. and Witzigmann, B. and Rumbolz, C. and Schillgalies, M. and Lell, A. and Härle, V. (2007) Experimental and Theoretical Study of Substrate Modes in (Al,In)GaN Laser Diodes. phys. stat. sol. (c) 4, p. 2772.

Vierheilig, Clemens and Braun, Harald and Schwarz, Uli and Wegscheider, Werner and Baur, E. and Strauß, U. and Härle, V. (2007) Lateral Diffusion of Photogenerated Carriers in InGaN/GaN-heterostructures Observed by PL Measurements. phys. stat. sol. (c) 4, p. 2362.

Vierheilig, Clemens and Braun, Harald and Schwarz, Uli and Wegscheider, Werner and Baur, E. and Strauß, U. and Härle, V. (2007) Temperature- and excitation density dependency of photoluminescence spectra in InGaN/GaN-heterostructures. phys. stat. sol. (c) 4, p. 179.

Engl, Karl and Beer, Martin and Gmeinwieser, Nikolaus and Schwarz, Ulrich and Zweck, Josef and Wegscheider, Werner and Miller, S. and Miler, A. and Lugauer, H. and Brüderl, G. and Lell, A. and Härle, V. (2006) Influence of an in situ-deposited SiN_x intermediate layer inside GaN and AlGaN layers on SiC substrates. Journal of Crystal Growth 289 (1), pp. 6-13.

Witzigmann, B. and Laino, V. and Luisier, M. and Schwarz, Uli and Feicht, Georg and Wegscheider, Werner and Engl, K. and Furitsch, M. and Leber, A. and Lell, A. and Härle, V. (2006) Microscopic analysis of optical gain in InGaN/GaN quantum wells. Applied Physics Letters 88, 021104.

Witzigmann, B. and Laino, V. and Luisier, M. and Schwarz, Uli and Fischer, H. and Feicht, Georg and Wegscheider, Werner and Rumbolz, C. and Lell, A. and Härle, V. (2006) Analysis of temperature dependent optical gain in GaN/InGaN quantum well structures. IEEE Phot. Tech. Lett. 18, p. 1600.

Schwarz, Uli and Lauterbach, C. and Schillgalies, M. and Rumbolz, C. and Furitsch, M. and Lell, A. and Härle, V. (2006) Time-resolved scanning near-field microscopy of InGaN laser diode dynamics. SPIE proceedings 6184, 61840K.

Schoedl, T. and Schwarz, Uli and Kümmler, V. and Furitsch, M. and Leber, A. and Miler, A. and Lell, A. and Härle, V. (2005) Facet degradation of GaN heterostructure laser diodes. Journal of Appli ed Physics 97, p. 123102.

Schwarz, Uli and Pindl, M. and Sturm, Evi and Furitsch, M. and Leber, A. and Miller, S. and Lell, A. and Härle, V. (2005) Influence of ridge geometry on lateral mode stability of (In/Al)GaN laser diodes. phys. stat. sol. (a) 202, p. 261.

Schwarz, Uli and Pindl, M. and Wegscheider, Werner and Eichler, C. and Scholz, F. and Furitsch, M. and Leber, A. and Miller, S. and Lell, A. and Härle, V. (2005) Near-field and far-field dynamics of (Al,In)GaN laser diodes. Applied Physics Letters 86, p. 161112.

Gmeinwieser, N. and Gottfriedsen, P. and Schwarz, Uli and Wegscheider, Werner and Clos, R. and Krtschil, A. and Krost, A. and Weimar, A. and Brüderl, G. and Lell, A. and Härle, V. (2005) Single dislocation induced strain in GaN. Journal of Appli ed Physics 98, p. 116102.

Gmeinwieser, N. and Engl, K. and Gottfriedsen, P. and Schwarz, Uli and Zweck, Josef and Wegscheider, Werner and Miller, S. and Lugauer, H. and Leber, A. and Lell, A. and Härle, V. (2004) Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrate. Journal of Appli ed Physics 96, J. Appl. Phys..

Schwarz, Uli and Sturm, Evi and Wegscheider, Werner and Kümmler, V. and Lell, A. and Härle, V. (2004) Excitonic signature in gain and carrier induced change of refractive index spectra of (In,Al)GaN quantum well lasers. Applied Physics Letters 85, p. 1475.

Schoedl, T. and Schwarz, Uli and Miller, S. and Leber, A. and Furitsch, M. and Lell, A. and Härle, V. (2004) Facet degradation of (Al,In)GaN laser diodes. phys. stat. sol. (a) 201, p. 2635.

Schwarz, Uli and Schoedl, T. and Kümmler, V. and Lell, A. and Härle, V. (2004) Laser Diode Facet Degradation Study. MRS Proceeding 798, Y11.10.1.

Schwarz, Uli and Wegscheider, Werner and Lell, A. and Härle, V. (2004) Nitride-based in-plane laser diodes with vertical current path. Proceedings of the SPIE 5365, p. 267.

Gmeinwieser, N. and Engl, K. and Schwarz, Uli and Zweck, Josef and Wegscheider, Werner and Miller, S. and Leber, A. and Lell, A. and Härle, V. (2004) Strain, wing tilt and Photoluminescence in ELOG GaN on SiC substrates. phys. stat. sol. (a) 201, p. 2760.

Schwarz, Uli and Sturm, Evi and Wegscheider, Werner and Kümmler, V. and Lell, A. and Härle, V. (2003) Gain spectra and current-induced change of refractice index in (In/Al)GaN diode lasers. phys. stat. sol. (a) 200, p. 143.

Schwarz, Uli and Sturm, Evi and Wegscheider, Werner and Kümmler, V. and Lell, A. and Härle, V. (2003) Optical gain, carrier-induced phase shift, and linewidth enhancement factor in InGaN quantum well lasers. Applied Physics Letters 83, p. 4095.

Kümmler, V. and Brüderl, G. and Bader, S. and Miller, S. and Weimar, A. and Lell, A. and Härle, V. and Schwarz, Ulrich and Gmeinwieser, Nikolaus and Wegscheider, Werner (2002) Degradation Analysis of InGaN Laser Diodes. physica status solidi a 194 (2), pp. 419-422.

Kümmler, V. and Brüderl, G. and Bader, S. and Miller, S. and Weimar, A. and Lell, A. and Härle, V. and Schwarz, Uli and Gmeinwieser, N. and Wegscheider, Werner (2002) Degradation Analysis of InGaN Laser Diodes. phys. stat. sol. (a) 194, p. 419.

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