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Number of items: 10.

Article

Lüscher, S. and Fuhrer, A. and Held, R. and Heinzel, Thomas and Ensslin, Klaus and Bichler, Max and Wegscheider, Werner (2002) Quantum wires and quantum dots defined by lithography with an atomic force microscope. Microelectronics Journal 33 (4), pp. 319-321. Fulltext restricted.
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Ihn, Thomas and Rychen, J. and Cilento, T. and Held, R. and Ensslin, Klaus and Wegscheider, Werner and Bichler, Max (2002) Scanning gate measurements on a quantum wire. Physica E Low-dimensional Systems and Nanostructures 12 (1-4), pp. 691-694. Fulltext restricted.
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Senz, V. and Heinzel, Thomas and Ihn, Thomas and Lindemann, S. and Held, R. and Ensslin, Klaus and Wegscheider, Werner and Bichler, Max (2001) Analysis of the temperature-dependent quantum point contact conductance in relation to the metal-insulator transition in two dimensions. Journal of Physics: Condensed Matter 13 (17), pp. 3831-3837. Fulltext restricted.
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Heinzel, Thomas and Held, R. and Lüscher, S. and Ensslin, Klaus and Wegscheider, Werner and Bichler, Max (2001) Electronic properties of nanostructures defined in Ga[Al]As heterostructures by local oxidation. Physica E Low-dimensional Systems and Nanostructures 9 (1), pp. 84-93. Fulltext restricted.
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Heinzel, Thomas H. and Salis, G. and Held, R. and Lüscher, S. and Ensslin, Klaus and Wegscheider, Werner and Bichler, Max (2000) Shifting a quantum wire through a disordered crystal: Observation of conductance fluctuations in real space. Physical Review B 61 (20), R13353-R13356. Fulltext restricted.
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Lüscher, S. and Fuhrer, A. and Held, R. and Heinzel, Thomas H. and Ensslin, Klaus and Wegscheider, Werner and Bichler, Max (2000) In-plane Gate Single Electron Transistor Fabricated by AFM Lithography. Journal of Low Temperature Physics 118 (5-6), pp. 333-342. Fulltext restricted.
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Heinzel, Thomas H. and Held, R. and Lüscher, S. and Ensslin, Klaus and Wegscheider, Werner (2000) Semiconductor nanostructures with short depletion length and stacked gates, patterned with an atomic force microscope. Physica E Low-dimensional Systems and Nanostructures 7 (3-4), pp. 860-863. Fulltext restricted.
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Lüscher, S. and Fuhrer, A. and Held, R. and Heinzel, Thomas and Ensslin, Klaus and Wegscheider, Werner (1999) In-plane gate single-electron transistor in Ga[Al]As fabricated by scanning probe lithography. Applied Physics Letters 75 (16), pp. 2452-2454. Fulltext restricted.
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Held, R. and Lüscher, S. and Heinzel, Thomas and Ensslin, K. and Wegscheider, Werner (1999) Fabricating tunable semiconductor devices with an atomic force microscope. Applied Physics Letters 75 (8), pp. 1134-1136. Fulltext restricted.
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Held, R. and Vancura, T. and Heinzel, Thomas and Ensslin, Klaus and Holland, M. and Wegscheider, Werner (1998) In-plane gates and nanostructures fabricated by direct oxidation of semiconductor heterostructures with an atomic force microscope. Applied Physics Letters 73 (2), pp. 262-264. Fulltext restricted.
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