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Number of items: 22.

Article

Witzigmann, B. and Laino, V. and Roemer, F. and Lauterbach, C. and Schwarz, Uli and Rumbolz, C. and Schillgalies, M. and Lell, A. and Härle, V. (2007) Analysis of substrate modes in GaN/InGaN Lasers. SPIE proceedings 6468, 64680Q. Fulltext not available.

Braun, Harald and Lauterbach, C. and Schwarz, Uli and Laino, V. and Witzigmann, B. and Rumbolz, C. and Schillgalies, M. and Lell, A. and Härle, V. (2007) Experimental and Theoretical Study of Substrate Modes in (Al,In)GaN Laser Diodes. phys. stat. sol. (c) 4, p. 2772. Fulltext not available.

Laino, V. and Roemer, F. and Witzigmann, B. and Lauterbach, C. and Schwarz, Uli and Rumbolz, C. and Schillgalies, M. and Furitsch, M. and Lell, A. and Här, V. (2007) Experimental and theoretical study of substrate modes in (Al,In)GaN laser diodes. IEEE J. Quantum Electronics 43, p. 16. Fulltext not available.

Laubsch, A. and Sabathil, M. and Bruederl, G. and Wagner, J. and Strassburg, M. and Baur, E. and Braun, Harald and Schwarz, Uli and Lell, A. and Lutgen, S. and Linder, N. and Oberschmid, R. and Hahn, B. (2007) Measurement of the internal quantum efficiency of InGaN quantum wells. Proc. SPIE 6486, 64860J. Fulltext not available.

Engl, Karl and Beer, Martin and Gmeinwieser, Nikolaus and Schwarz, Ulrich and Zweck, Josef and Wegscheider, Werner and Miller, S. and Miler, A. and Lugauer, H. and Brüderl, G. and Lell, A. and Härle, V. (2006) Influence of an in situ-deposited SiN_x intermediate layer inside GaN and AlGaN layers on SiC substrates. Journal of Crystal Growth 289 (1), pp. 6-13. Fulltext restricted.
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Witzigmann, B. and Laino, V. and Luisier, M. and Schwarz, Uli and Feicht, Georg and Wegscheider, Werner and Engl, K. and Furitsch, M. and Leber, A. and Lell, A. and Härle, V. (2006) Microscopic analysis of optical gain in InGaN/GaN quantum wells. Applied Physics Letters 88, 021104. Fulltext restricted.
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Witzigmann, B. and Laino, V. and Luisier, M. and Schwarz, Uli and Fischer, H. and Feicht, Georg and Wegscheider, Werner and Rumbolz, C. and Lell, A. and Härle, V. (2006) Analysis of temperature dependent optical gain in GaN/InGaN quantum well structures. IEEE Phot. Tech. Lett. 18, p. 1600. Fulltext not available.

Schwarz, Uli and Lauterbach, C. and Schillgalies, M. and Rumbolz, C. and Furitsch, M. and Lell, A. and Härle, V. (2006) Time-resolved scanning near-field microscopy of InGaN laser diode dynamics. SPIE proceedings 6184, 61840K. Fulltext not available.

Schoedl, T. and Schwarz, Uli and Kümmler, V. and Furitsch, M. and Leber, A. and Miler, A. and Lell, A. and Härle, V. (2005) Facet degradation of GaN heterostructure laser diodes. Journal of Appli ed Physics 97, p. 123102. Fulltext not available.

Schwarz, Uli and Pindl, M. and Sturm, Evi and Furitsch, M. and Leber, A. and Miller, S. and Lell, A. and Härle, V. (2005) Influence of ridge geometry on lateral mode stability of (In/Al)GaN laser diodes. phys. stat. sol. (a) 202, p. 261. Fulltext not available.

Schwarz, Uli and Pindl, M. and Wegscheider, Werner and Eichler, C. and Scholz, F. and Furitsch, M. and Leber, A. and Miller, S. and Lell, A. and Härle, V. (2005) Near-field and far-field dynamics of (Al,In)GaN laser diodes. Applied Physics Letters 86, p. 161112. Fulltext not available.

Gmeinwieser, N. and Gottfriedsen, P. and Schwarz, Uli and Wegscheider, Werner and Clos, R. and Krtschil, A. and Krost, A. and Weimar, A. and Brüderl, G. and Lell, A. and Härle, V. (2005) Single dislocation induced strain in GaN. Journal of Appli ed Physics 98, p. 116102. Fulltext not available.

Gmeinwieser, N. and Engl, K. and Gottfriedsen, P. and Schwarz, Uli and Zweck, Josef and Wegscheider, Werner and Miller, S. and Lugauer, H. and Leber, A. and Lell, A. and Härle, V. (2004) Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrate. Journal of Appli ed Physics 96, J. Appl. Phys.. Fulltext not available.

Schwarz, Uli and Sturm, Evi and Wegscheider, Werner and Kümmler, V. and Lell, A. and Härle, V. (2004) Excitonic signature in gain and carrier induced change of refractive index spectra of (In,Al)GaN quantum well lasers. Applied Physics Letters 85, p. 1475. Fulltext not available.

Schoedl, T. and Schwarz, Uli and Miller, S. and Leber, A. and Furitsch, M. and Lell, A. and Härle, V. (2004) Facet degradation of (Al,In)GaN laser diodes. phys. stat. sol. (a) 201, p. 2635. Fulltext not available.

Schwarz, Uli and Schoedl, T. and Kümmler, V. and Lell, A. and Härle, V. (2004) Laser Diode Facet Degradation Study. MRS Proceeding 798, Y11.10.1. Fulltext not available.

Schwarz, Uli and Wegscheider, Werner and Lell, A. and Härle, V. (2004) Nitride-based in-plane laser diodes with vertical current path. Proceedings of the SPIE 5365, p. 267. Fulltext not available.

Gmeinwieser, N. and Engl, K. and Schwarz, Uli and Zweck, Josef and Wegscheider, Werner and Miller, S. and Leber, A. and Lell, A. and Härle, V. (2004) Strain, wing tilt and Photoluminescence in ELOG GaN on SiC substrates. phys. stat. sol. (a) 201, p. 2760. Fulltext not available.

Schwarz, Uli and Sturm, Evi and Wegscheider, Werner and Kümmler, V. and Lell, A. and Härle, V. (2003) Gain spectra and current-induced change of refractice index in (In/Al)GaN diode lasers. phys. stat. sol. (a) 200, p. 143. Fulltext not available.

Schwarz, Uli and Sturm, Evi and Wegscheider, Werner and Kümmler, V. and Lell, A. and Härle, V. (2003) Optical gain, carrier-induced phase shift, and linewidth enhancement factor in InGaN quantum well lasers. Applied Physics Letters 83, p. 4095. Fulltext not available.

Kümmler, V. and Brüderl, G. and Bader, S. and Miller, S. and Weimar, A. and Lell, A. and Härle, V. and Schwarz, Ulrich and Gmeinwieser, Nikolaus and Wegscheider, Werner (2002) Degradation Analysis of InGaN Laser Diodes. physica status solidi a 194 (2), pp. 419-422. Fulltext restricted.
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Kümmler, V. and Brüderl, G. and Bader, S. and Miller, S. and Weimar, A. and Lell, A. and Härle, V. and Schwarz, Uli and Gmeinwieser, N. and Wegscheider, Werner (2002) Degradation Analysis of InGaN Laser Diodes. phys. stat. sol. (a) 194, p. 419. Fulltext not available.

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