Startseite UB

Browse by Person

Up a level
Export as [feed] Atom [feed] RSS 1.0 [feed] RSS 2.0
Group by: Item Type | No Grouping
Jump to: Article
Number of items: 11.

Article

Gmeinwieser, Nikolaus and Gottfriedsen, P. and Schwarz, Ulrich and Wegscheider, Werner and Clos , R. and Krtschil, A. and Krost, A. and Engl, Karl and Weimar, A. and Brüderl, G. and Lell, Alfred and Härle, Volker (2006) Long range strain and electrical potential induced by single edge dislocations in GaN. Physica B Condensed Matter 376-37, pp. 451-454.

Engl, Karl and Beer, Martin and Gmeinwieser, Nikolaus and Schwarz, Ulrich and Zweck, Josef and Wegscheider, Werner and Miller, Stephan and Miler, A. and Lugauer, H.-J. and Brüderl, G. and Lell, Alfred and Härle, Volker (2006) Influence of an in situ-deposited SiNx intermediate layer inside GaN and AlGaN layers on SiC substrates. Journal of Crystal Growth 289 (1), pp. 6-13.

Witzigmann, B. and Laino, V. and Luisier, M. and Schwarz, Ulrich and Feicht, Georg and Wegscheider, Werner and Engl, Karl and Furitsch, Michael and Leber, Andreas and Lell, Alfred and Härle, Volker (2006) Microscopic analysis of optical gain in InGaN/GaN quantum wells. Applied Physics Letters 88 (2), 021104.

Gmeinwieser, Nikolaus and Gottfriedsen, P. and Schwarz, Ulrich and Wegscheider, Werner and Clos, R. and Krtschil, A. and Krost, A. and Weimar, Andreas and Brüderl, G. and Lell, Alfred and Härle, Volker (2005) Local strain and potential distribution induced by single dislocations in GaN. Journal of Applied Physics 98 (11), p. 116102.

Schwarz, Ulrich and Pindl, Markus and Wegscheider, Werner and Eichler, Christoph and Scholz, Ferdinand and Furitsch, Michael and Leber, Andreas and Miller, Stephan and Lell, Alfred and Härle, Volker (2005) Near-field and far-field dynamics of (Al,In)GaN laser diodes. Applied Physics Letters 80 (16), p. 161112.

Gmeinwieser, Nikolaus and Engl, Karl and Gottfriedsen, P. and Schwarz, Ulrich and Zweck, Josef and Wegscheider, Werner and Miller, S. and Lugauer, H.-J. and Leber, A. and Weimar, A. and Lell, Alfred and Härle, Volker (2004) Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates. Journal of Applied Physics 96 (7), pp. 3666-3672.

Gmeinwieser, Nikolaus and Engl, Karl and Schwarz, Ulrich and Zweck, Josef and Wegscheider, Werner and Miller, Stephan and Leber, Andreas and Weimar, Andreas and Lell, Alfred and Härle, Volker (2004) Strain, wing tilt and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates. physica status solidi a 201 (12), pp. 2760-2763.

Schwarz, Ulrich and Sturm, Evi and Wegscheider, Werner and Kümmler, V. and Lell, Alfred and Härle, Volker (2004) Excitonic signature in gain and carrier induced change of refractive index spectra of (In,Al)GaN quantum well lasers. Applied Physics Letters 85 (9), pp. 1475-1477.

Kümmler, V. and Lell, Alfred and Härle, Volker and Schwarz, Ulrich and Schoedl, T. and Wegscheider, Werner (2004) Gradual facet degradation of (Al,In)GaN quantum well lasers. Applied Physics Letters 84 (16), pp. 2989-2991.

Schwarz, Ulrich and Sturm, Evi and Wegscheider, Werner and Kümmler, V. and Lell, Alfred and Härle, Volker (2003) Optical gain, carrier-induced phase shift, and linewidth enhancement factor in InGaN quantum well lasers. Applied Physics Letters 83 (20), 4095 .

Schwarz, Ulrich and Sturm, Evi and Wegscheider, Werner and Kümmler, V. and Lell, Alfred and Härle, Volker (2003) Gain spectra and current-induced change of refractice index in (In/Al)GaN diode lasers. physica status solidi a 200 (1), pp. 143-146.

This list was generated on Wed Oct 22 03:44:56 2014 CEST.
  1. University

University Library

Publication Server

Contact person
Gernot Deinzer

Telefon 0941 943-2759
Contact