Publikationen von Lockwood, David J.

Titova, Lyubov V., Cocker, Tyler L., Xu, Sijia, Baribeau, Jean-Marc, Wu, Xiaohua, Lockwood, David J. und Hegmann, Frank A. (2016) Ultrafast carrier dynamics and the role of grain boundaries in polycrystalline silicon thin films grown by molecular beam epitaxy. Semiconductor Science and Technology 31 (10), S. 105017. Volltext nicht vorhanden.

Ganichev, Sergey und Prettl, Wilhelm (1995) Tunnel ionization of deep impurities in the electric field of far-infrared radiation. In: Lockwood, David J., (ed.) 22nd International Conference on The Physics of Semiconductors: Vancouver, Canada August 15 - 19, 1994. Band 3. World Scientific, Singapore, S. 2189. ISBN 981-022980-1. Volltext nicht vorhanden.