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Number of items: 10.

Article

Engl, Karl and Beer, Martin and Gmeinwieser, Nikolaus and Schwarz, Ulrich and Zweck, Josef and Wegscheider, Werner and Miller, S. and Miler, A. and Lugauer, H. and Brüderl, G. and Lell, A. and Härle, V. (2006) Influence of an in situ-deposited SiN_x intermediate layer inside GaN and AlGaN layers on SiC substrates. Journal of Crystal Growth 289 (1), pp. 6-13.

Krylov, V. N. and Miller, S. and Rachel, Reinhard and Biebl, M. and Pletneva, E. A. and Shuetz, M. and Krylov, S. V. and Shaburova, O. V. (2006) Ambivalent bacteriophages of different species active on Escherichia coli K12 and Salmonella sps. strains. Genetika 42 (2), pp. 159-168.

Schwarz, Uli and Pindl, M. and Sturm, Evi and Furitsch, M. and Leber, A. and Miller, S. and Lell, A. and Härle, V. (2005) Influence of ridge geometry on lateral mode stability of (In/Al)GaN laser diodes. phys. stat. sol. (a) 202, p. 261.

Schwarz, Uli and Pindl, M. and Wegscheider, Werner and Eichler, C. and Scholz, F. and Furitsch, M. and Leber, A. and Miller, S. and Lell, A. and Härle, V. (2005) Near-field and far-field dynamics of (Al,In)GaN laser diodes. Applied Physics Letters 86, p. 161112.

Gmeinwieser, Nikolaus and Engl, Karl and Gottfriedsen, P. and Schwarz, Ulrich and Zweck, Josef and Wegscheider, Werner and Miller, S. and Lugauer, H.-J. and Leber, A. and Weimar, A. and Lell, Alfred and Härle, Volker (2004) Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates. Journal of Applied Physics 96 (7), pp. 3666-3672.

Gmeinwieser, N. and Engl, K. and Gottfriedsen, P. and Schwarz, Uli and Zweck, Josef and Wegscheider, Werner and Miller, S. and Lugauer, H. and Leber, A. and Lell, A. and Härle, V. (2004) Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrate. Journal of Appli ed Physics 96, J. Appl. Phys..

Schoedl, T. and Schwarz, Uli and Miller, S. and Leber, A. and Furitsch, M. and Lell, A. and Härle, V. (2004) Facet degradation of (Al,In)GaN laser diodes. phys. stat. sol. (a) 201, p. 2635.

Gmeinwieser, N. and Engl, K. and Schwarz, Uli and Zweck, Josef and Wegscheider, Werner and Miller, S. and Leber, A. and Lell, A. and Härle, V. (2004) Strain, wing tilt and Photoluminescence in ELOG GaN on SiC substrates. phys. stat. sol. (a) 201, p. 2760.

Kümmler, V. and Brüderl, G. and Bader, S. and Miller, S. and Weimar, A. and Lell, A. and Härle, V. and Schwarz, Ulrich and Gmeinwieser, Nikolaus and Wegscheider, Werner (2002) Degradation Analysis of InGaN Laser Diodes. physica status solidi a 194 (2), pp. 419-422.

Kümmler, V. and Brüderl, G. and Bader, S. and Miller, S. and Weimar, A. and Lell, A. and Härle, V. and Schwarz, Uli and Gmeinwieser, N. and Wegscheider, Werner (2002) Degradation Analysis of InGaN Laser Diodes. phys. stat. sol. (a) 194, p. 419.

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