Startseite UR

Publikationen von Mordovets, N.

Eine Stufe nach oben
Exportieren als
[feed] Atom [feed] RSS 1.0 [feed] RSS 2.0
Gruppieren nach: Datum | Dokumentenart | Keine Gruppierung
Gehe zu: 1996 | 1995 | 1993 | 1992 | 1989 | 1988 | 1986
Anzahl der Einträge: 19.

1996

Ganichev, Sergey, Shul'man, A., Kotel'nikov, I., Mordovets, N. und Prettl, Wilhelm (1996) Response of tunnel Schottky-barrier junction to radiation pressure of FIR laser radiation. International Journal of Infrared and Millimeter Waves 17 (8), S. 1353-1364.

1995

Kotel'nikov, I., Shul'man, A., Mordovets, N., Ganichev, Sergey und Prettl, Wilhelm (1995) Effect of pulsed FIR laser radiation on tunnel and channel resistance of delta-doped GaAs. Physics of low dimensional structures 12, S. 133-140.

Kotel'nikov, I., Shul'man, A., Mordovets, N., Varvanin, N., Ganichev, Sergey, Mayerhofer, B. und Prettl, Wilhelm (1995) Effect of pulsed FIR laser radiation on tunnel and channel resistance of delta-doped GaAs. In: Towe, E., (ed.) Proceedings / 1995 International Semiconductor Device Research Symposium, December 5 - 8, 1995, Band 1. Engineering Academic Outreach, University of Virginia, Charlottesville, Va., S. 99. ISBN 1-88092-003-4.

Kotel'nikov, I., Shul'man, A., Mordovets, N., Varvanin, N., Ganichev, Sergey, Mayerhofer, B. und Prettl, Wilhelm (1995) Effect of pulsed FIR laser radiation on tunnel and channel resistance of delta-doped GaAs. In: International Semiconductor Device Research Symposium (invited), 5. - 8. Dezember 1995, Charlottesville, Virginia, USA. Volltext nicht vorhanden.

Kotel'nikov, I., Shul'man, A., Mordovets, N., Ganichev, Sergey und Prettl, Wilhelm (1995) Effect of pulsed FIR laser radiation on tunnel and channel resistance of delta-doped GaAs. In: 2nd International Conference "Physics of Low-Dimensional Structures-2'' (PLDS–2), 18. - 22. September 1995, Dubna, Russia. Volltext nicht vorhanden.

Ganichev, Sergey, Gloukh, K., Kotel'nikov, I., Mordovets, N., Shul'man, A. und Yaroshetskii, I. (1995) Fast point detector of submillimeter radiation. In: Levinštejn, Michail E., (ed.) Best of Soviet semiconductor physics and technology, 1989 - 1990. World Scientific, Singapore, S. 567. ISBN 981-021579-7. Volltext nicht vorhanden.

Ganichev, Sergey, Kotel'nikov, I., Mordovets, N., Shul'man, A. und Prettl, Wilhelm (1995) Investigations of tunnelling process at radiation pressure in Schottky-barrier junction. In: Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, 1995, Berlin, Germany. Volltext nicht vorhanden.

1993

Ganichev, Sergey, Gloukh, K., Kotel'nikov, I., Mordovets, N., Shul'man, A. und Yaroshetskii, I. (1993) New fast point detector of FIR radiation. In: Beltram, Fabio und Gornik, Erich, (eds.) Physical concepts and materials for novel optoelectronic device applications II: international symposium; 24 - 27 May 1993, Trieste, Italy. SPIE proceedings series, 1985. SPIE, Bellingham, Wash., S. 526-529. ISBN 0-8194-1234-1.

Ganichev, Sergey, Gloukh, K., Kotel'nikov, I., Mordovets, N., Shul'man, A. und Yaroshetskii, I. (1993) New fast point detector of FIR radiation. In: Physical Concepts and Materials for Novel Optoelectronic Device Applications II, 24. - 27. Mai 1993, Triest, Italy. Volltext nicht vorhanden.

1992

Ganichev, Sergey, Gloukh, K., Kotel'nikov, I., Mordovets, N., Shul'man, A. und Yaroshetskii, I. (1992) Tunneling in Schottky-barrier metal-semiconductor junctions during plasma reflection of laser light. Soviet physics JETP 75 (3), S. 495-504.

1989

Ganichev, Sergey, Gloukh, K., Kotel'nikov, I., Mordovets, N., Shul'man, A. und Yaroshetskii, I. (1989) Fast point detector of submillimeter radiation. Soviet technical physics letters: Letters to journal of technical physics 15 (4), S. 290-291.

Ganichev, Sergey, Gloukh, K., Kotel'nikov, I., Mordovets, N., Shul'man, A. und Yaroshetskii, I. (1989) Detector for laser radiation on the Schottky-barrier tunnel junctions. In: Soviet Conference on Photoelectrical effects in semiconductors, 1989, Tashkent, USSR. Volltext nicht vorhanden.

Ganichev, Sergey, Gloukh, K., Kotel'nikov, I., Mordovets, N., Shul'man, A. und Yaroshetskii, I. (1989) Fast detector for far-IR laser beams on the Schottky-barrier tunnel diodes. In: MacMillan, Ann Simmons und Tucker, Gail M., (eds.) Conference digest / ICMWFT '89, International Conference on Millimeter Wave and Far-Infrared Technology: Dragon Spring Hotel Beijing, China June 19-23, 1989. Pergamon Press, Oxford, S. 155. ISBN 7-80003-063-6; 0-08-037880-3. Volltext nicht vorhanden.

Ganichev, Sergey, Gloukh, K., Kotel'nikov, I., Mordovets, N., Shul'man, A. und Yaroshetskii, I. (1989) Fast detector for far-IR laser beams on the Schottky-barrier tunnel diodes. In: International Conference on Millimeter Wave and Far-Infrared Technology, 19. - 23. Juni 1989, Bejing, China. Volltext nicht vorhanden.

1988

Ganichev, Sergey, Gloukh, K., Kotel'nikov, I., Mordovets, N., Shul'man, A. und Yaroshetskii, I. (1988) Tunneling in Schottky-barrier metal-semiconductor junctions at plasma reflection of laser light. In: 11th Soviet Seminar on Interaction of Electromagnetic Waves with Semiconductors and Semiconductor-Dielectric Structures 2, 1988, Saratov, USSR. Volltext nicht vorhanden.

Ganichev, Sergey, Gloukh, K., Kotel'nikov, I., Mordovets, N., Shul'man, A. und Yaroshetskii, I. (1988) Tunneling in Schottky-barrier metal-semiconductor junctions during plasma reflection of laser light. In: Zawadzki, Włodzimierz, (ed.) 19th International Conference on the Physics of Semiconductors. Band 1: Warsaw, Poland, Aug. 15-19, 1988. Institute of Physics, Polish Acadamey of Sciences, Warsaw, S. 669-672. ISBN 83-00-02465-4.

Ganichev, Sergey, Gloukh, K., Kotel'nikov, I., Mordovets, N., Shul'man, A. und Yaroshetskii, I. (1988) Tunneling in Schottky-barrier metal-semiconductor junctions during plasma reflection of laser light. In: 19th International Conference on the Physics of Semiconductors, 15. - 19. August 1988, Warsaw, Poland. Volltext nicht vorhanden.

Ganichev, Sergey, Gloukh, K., Kotel'nikov, I., Mordovets, N., Shul'man, A. und Yaroshetskii, I. (1988) Tunneling stimulation in Schottky-barrier metal-semiconductor junctions during plasma reflection of laser light. In: 11th Soviet Conference on the Physics of Semiconductors, 1988, Kishinev, USSR. Volltext nicht vorhanden.

1986

Ganichev, Sergey, Kotel'nikov, I., Mordovets, N., Shul'man, A. und Yaroshetskii, I. (1986) Photoresistive effect in n-GaAs/Au tunnel junctions during plasma reflection of laser light. JETP Letters 44 (5), S. 301-304.

Diese Liste wurde erzeugt am Sat Dec 3 10:33:08 2016 CET.
  1. Universität

Universitätsbibliothek

Publikationsserver

Kontakt:

Publizieren: oa@ur.de

Dissertationen: dissertationen@ur.de

Forschungsdaten: daten@ur.de

Ansprechpartner