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Publications by Neumann, Richard

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Jump to: 2003 | 2002 | 2001 | 1998 | 1997
Number of items: 11.

2003

Belkov, Vassilij and Ganichev, Sergey and Schneider, Petra and Schowalter, D. and Rössler, Ulrich and Prettl, Wilhelm and Ivchenko, Eougenious and Neumann, Richard and Brunner, K. and Abstreiter, Gerhard (2003) Spin-photocurrent in p-SiGe quantum wells under terahertz laser irradiation. Journal of Superconductivity: Incorporating Novel Magnetism 16 (2), pp. 415-418.
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Belkov, Vassilij and Ganichev, Sergey and Schneider, Petra and Schowalter, D. and Rössler, Ulrich and Prettl, Wilhelm and Ivchenko, E. and Neumann, Richard and Brunner, K. and Abstreiter, Gerhard (2003) Spin-Photocurrent in p-SiGe quantum wells under terahertz laser irradiation. Journal of Superconductivity 16 (2), pp. 415-418. Fulltext restricted.
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2002

Ganichev, Sergey and Rössler, Ulrich and Prettl, Wilhelm and Ivchenko, E. and Belkov, Vassilij and Neumann, Richard and Brunner, K. and Abstreiter, Gerhard (2002) Removal of spin-degenerancy in p-SiGe quantum wells demonstrated by spin-photocurrents. Physical Review B 66 (7), p. 75328. Fulltext restricted.
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Ganichev, Sergey and Rössler, Ulrich and Prettl, Wilhelm and Ivchenko, Eougenious and Belkov, Vassilij and Neumann, Richard and Brunner, K. and Abstreiter, Gerhard (2002) Removal of spin degeneracy in SiGe-based nanostructures. In: Alferov, Zhores I. and Esaki, Leo, (eds.) 10th International Symposium on Nanostructures: Physics and Technology. SPIE proceedings series, 5023. SPIE, Bellingham, Washington, p. 169. ISBN 0-8194-4824-9. Fulltext not available.

Ganichev, Sergey and Rössler, Ulrich and Kalz, Franz-Peter and Prettl, Wilhelm and Neumann, Richard and Brunner, Karl and Abstreiter, Gerhard and Ivchenko, Eougenious (2002) Sympos. Circular photogalvanic effect in Si/Ge semiconductor quantum wells. In: Klemmer, Timothy J. and Sun, Jonathan Z. and Fert, Albert and Bass, Jack, (eds.) Materials Research Society symposium proceedings; 690. MRS, Warrendale, Pa., F3.11.1. ISBN 1-558-99626-5.
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Sollinger, M. and Ganichev, Sergey and Kalz, Franz-Peter and Rössler, Ulrich and Prettl, Wilhelm and Ivchenko, Eougenious and Belkov, Vassilij and Neumann, Richard and Brunner, K. and Abstreiter, Gerhard (2002) Photogalvanischer Effekt in Si/Ge-Quantentrögen. In: Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, 11. - 15. März 2002, Regensburg. Fulltext not available.

Ganichev, Sergey and Rössler, Ulrich and Prettl, Wilhelm and Ivchenko, Eougenious and Belkov, Vassilij and Neumann, Richard and Brunner, K. and Abstreiter, Gerhard (2002) Removal of spin degeneracy in SiGe based nanostructures. In: Alferov, Zhores I. and Esaki, Leo, (eds.) Nanostructures: physics and technology: 10th international symposium, St. Petersburg, Russia, June 17 - 21, 2002; proceedings. SPIE proceedings series, 5023. SPIE, Bellingham, Washington, pp. 187-190. ISBN 0-8194-4824-9.
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2001

Ganichev, Sergey and Kalz, Franz-Peter and Prettl, Wilhelm and Neumann, Richard and Brunner, K. and Abstreiter, Gerhard and Ivchenko, Eougenious (2001) Circular photogalvanic effect in Si/Ge semiconductor quantum wells. In: MRS Fall Meeting, 26. - 30. November 2001, Boston, Massachusetts, USA. Fulltext not available.

Ganichev, Sergey and Rössler, Ulrich and Prettl, Wilhelm and Ivchenko, Eougenious and Belkov, Vassilij and Neumann, Richard and Brunner, K. and Abstreiter, Gerhard (2001) Removal of spin degeneracy in SiGe based nanostructures. In: 9th International Symposium Nanostructures: Physics and Technology, 18. - 22. Juni 2001, St. Petersburg, Russia. Fulltext not available.

1998

Wegscheider, Werner and Schedelbeck, Gert and Neumann, Richard and Bichler, Max (1998) (1 1 0) oriented quantum wells and modulation-doped heterostructures for cleaved edge overgrowth. Physica E Low-dimensional Systems and Nanostructures 2 (1-4), pp. 131-136. Fulltext restricted.
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1997

Baumgartner, P. and Wegscheider, Werner and Bichler, Max and Schedelbeck, G. and Neumann, Richard and Abstreiter, Gerhard (1997) Single-electron transistor fabricated by focused laser beam-induced doping of a GaAs/AlGaAs heterostructure. Applied Physics Letters 70 (16), pp. 2135-2137. Fulltext restricted.
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