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Number of items: 15.

Article

Ganichev, Sergey and Emel'yanov, S. and Terent'ev, Y. and Yaroshetskii, I. (1989) On the domain of application of fast submillimeter detectors cooled to T=77 K. Soviet physics: Solid state 34 (5), pp. 565-566.

Ganichev, Sergey and Emel'yanov, S. and Ivchenko, E. and Perlin, E. and Terent'ev, Y. and Fedorov, A. and Yaroshetskii, I. (1986) Multiphoton absorption in semiconductors at submillimeter wavelengths. Soviet physics JETP 64 (4), pp. 729-737.

Ganichev, Sergey and Dmitriev, A. and Emel'yanov, S. and Terent'ev, Y. and Yaroshetskii, I. and Yassievich, I. (1986) Impact ionization in semiconductors under the influence of the electric field of an optical wave. Soviet physics JETP 63 (2), pp. 256-263.

Ganichev, Sergey and Emel'yanov, S. and Pakhomov, A. and Terent'ev, Y. and Yaroshetskii, I. (1985) Fast uncooled detector for far-IR and submillimeter laser beams. Soviet technical physics letters 11 (8), pp. 377-378.

Ganichev, Sergey and Terent'ev, Y. and Yaroshetskii, I. (1985) Photon-drag photodetectors for the far-IR and submillimeter regions. Soviet technical physics letters 11 (1), p. 20.

Ganichev, Sergey and Dmitriev, A. and Emel'yanov, S. and Terent'ev, Y. and Yaroshetskii, I. and Yassievich, I. (1984) Impact ionization in a semiconductor in a light wave. JETP Letters 40 (5), pp. 948-951.

Ganichev, Sergey and Emel'yanov, S. and Terent'ev, Y. and Yaroshetskii, I. (1984) Drag of carriers by photons under conditions of multiphoton absorption of submillimeter radiation in p-type germanium. Semiconductors 18 (2), pp. 164-166.

Book Section

Ganichev, Sergey and Dmitriev, A. and Emel'yanov, S. and Terent'ev, Y. and Yaroshetskii, I. and Yassievich, Irina (1988) Light impact ionization in semiconductors. In: Zawadzki, Włodzimierz, (ed.) 19th International Conference on the Physics of Semiconductors. Band 2: Warsaw, Poland, Aug. 15-19, 1988. Institute of Physics, Polish Academy of Sciences, Warsaw, pp. 1373-1376. ISBN 83-00-02465-4.

Conference or Workshop Item

Ganichev, Sergey and Dmitriev, A. and Emel'yanov, S. and Terent'ev, Y. and Yaroshetskii, I. and Yassievich, I. (1988) Light impact ionization in InSb. In: 3rd Conference on Physics and Technology of GaAs and other A3-B5 Semiconductors, 28. November - 02. Dezember 1988, Tatranska Lomnisa.

Ganichev, Sergey and Dmitriev, A. and Emel'yanov, S. and Terent'ev, Y. and Yaroshetskii, I. and Yassievich, Irina (1988) Light impact ionization in semiconductors. In: 19th International Conference on the Physics of Semiconductors, 15. - 19. August 1988, Warsaw, Poland.

Ganichev, Sergey and Dmitriev, A. and Emel'yanov, S. and Terent'ev, Y. and Yaroshetskii, I. and Yassievich, I. (1986) Impact ionization in semiconductors under the influence of the electric field of an optical wave. In: 6th Soviet Conference on Plasma and Current Instabilities in Semiconductors, 1986, Vilnus, USSR.

Ganichev, Sergey and Dmitriev, A. and Emel'yanov, S. and Terent'ev, Y. and Yaroshetskii, I. and Yassievich, I. (1986) To the question of impact ionization in p-type InSb. In: 6th Soviet Conference on Plasma and Current Instabilities in Semiconductors, 1986, Vilnus, USSR.

Ganichev, Sergey and Emel'yanov, S. and Pakhomov, A. and Terent'ev, Y. and Yaroshetskii, I. (1985) Fast uncooled detector for far-IR and submillimeter laser beams on the base of intraband photoconductivity. In: 5th Soviet Conference on Photometric and its Metrological Providence, 1985, Moscow, USSR.

Ganichev, Sergey and Emel'yanov, S. and Ivchenko, E. and Perlin, E. and Terent'ev, Y. and Fedorov, A. and Yaroshetskii, I. (1985) New type of nonlinear absorption in semiconductors. In: 10th Soviet Conference on the Physics of Semiconductors 2, 1985, Minsk, USSR.

Ganichev, Sergey and Terent'ev, Y. and Yaroshetskii, I. (1985) Photon-drag fast uncooled detectors of laser radiation for the far-IR and submillimeter regions. In: 5th Soviet Conference on Photometric and its Metrological Providence, 1985, Moscow, USSR.

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