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Publikationen von Terent'ev, Y.

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Gehe zu: 1989 | 1988 | 1986 | 1985 | 1984
Anzahl der Einträge: 15.

1989

Ganichev, Sergey, Emel'yanov, S., Terent'ev, Y. und Yaroshetskii, I. (1989) On the domain of application of fast submillimeter detectors cooled to T=77 K. Soviet physics: Solid state 34 (5), S. 565-566.

1988

Ganichev, Sergey, Dmitriev, A., Emel'yanov, S., Terent'ev, Y., Yaroshetskii, I. und Yassievich, I. (1988) Light impact ionization in InSb. In: 3rd Conference on Physics and Technology of GaAs and other A3-B5 Semiconductors, 28. November - 02. Dezember 1988, Tatranska Lomnisa. Volltext nicht vorhanden.

Ganichev, Sergey, Dmitriev, A., Emel'yanov, S., Terent'ev, Y., Yaroshetskii, I. und Yassievich, Irina (1988) Light impact ionization in semiconductors. In: Zawadzki, Włodzimierz, (ed.) 19th International Conference on the Physics of Semiconductors. Band 2: Warsaw, Poland, Aug. 15-19, 1988. Institute of Physics, Polish Academy of Sciences, Warsaw, S. 1373-1376. ISBN 83-00-02465-4.

Ganichev, Sergey, Dmitriev, A., Emel'yanov, S., Terent'ev, Y., Yaroshetskii, I. und Yassievich, Irina (1988) Light impact ionization in semiconductors. In: 19th International Conference on the Physics of Semiconductors, 15. - 19. August 1988, Warsaw, Poland. Volltext nicht vorhanden.

1986

Ganichev, Sergey, Emel'yanov, S., Ivchenko, E., Perlin, E., Terent'ev, Y., Fedorov, A. und Yaroshetskii, I. (1986) Multiphoton absorption in semiconductors at submillimeter wavelengths. Soviet physics JETP 64 (4), S. 729-737.

Ganichev, Sergey, Dmitriev, A., Emel'yanov, S., Terent'ev, Y., Yaroshetskii, I. und Yassievich, I. (1986) Impact ionization in semiconductors under the influence of the electric field of an optical wave. Soviet physics JETP 63 (2), S. 256-263.

Ganichev, Sergey, Dmitriev, A., Emel'yanov, S., Terent'ev, Y., Yaroshetskii, I. und Yassievich, I. (1986) Impact ionization in semiconductors under the influence of the electric field of an optical wave. In: 6th Soviet Conference on Plasma and Current Instabilities in Semiconductors, 1986, Vilnus, USSR. Volltext nicht vorhanden.

Ganichev, Sergey, Dmitriev, A., Emel'yanov, S., Terent'ev, Y., Yaroshetskii, I. und Yassievich, I. (1986) To the question of impact ionization in p-type InSb. In: 6th Soviet Conference on Plasma and Current Instabilities in Semiconductors, 1986, Vilnus, USSR. Volltext nicht vorhanden.

1985

Ganichev, Sergey, Emel'yanov, S., Pakhomov, A., Terent'ev, Y. und Yaroshetskii, I. (1985) Fast uncooled detector for far-IR and submillimeter laser beams. Soviet technical physics letters 11 (8), S. 377-378.

Ganichev, Sergey, Terent'ev, Y. und Yaroshetskii, I. (1985) Photon-drag photodetectors for the far-IR and submillimeter regions. Soviet technical physics letters 11 (1), S. 20.

Ganichev, Sergey, Emel'yanov, S., Pakhomov, A., Terent'ev, Y. und Yaroshetskii, I. (1985) Fast uncooled detector for far-IR and submillimeter laser beams on the base of intraband photoconductivity. In: 5th Soviet Conference on Photometric and its Metrological Providence, 1985, Moscow, USSR. Volltext nicht vorhanden.

Ganichev, Sergey, Emel'yanov, S., Ivchenko, E., Perlin, E., Terent'ev, Y., Fedorov, A. und Yaroshetskii, I. (1985) New type of nonlinear absorption in semiconductors. In: 10th Soviet Conference on the Physics of Semiconductors 2, 1985, Minsk, USSR. Volltext nicht vorhanden.

Ganichev, Sergey, Terent'ev, Y. und Yaroshetskii, I. (1985) Photon-drag fast uncooled detectors of laser radiation for the far-IR and submillimeter regions. In: 5th Soviet Conference on Photometric and its Metrological Providence, 1985, Moscow, USSR. Volltext nicht vorhanden.

1984

Ganichev, Sergey, Dmitriev, A., Emel'yanov, S., Terent'ev, Y., Yaroshetskii, I. und Yassievich, I. (1984) Impact ionization in a semiconductor in a light wave. JETP Letters 40 (5), S. 948-951.

Ganichev, Sergey, Emel'yanov, S., Terent'ev, Y. und Yaroshetskii, I. (1984) Drag of carriers by photons under conditions of multiphoton absorption of submillimeter radiation in p-type germanium. Semiconductors 18 (2), S. 164-166.

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