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Publications by Vogl, P.

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Jump to: 2009 | 2004 | 1993 | 1992 | 1991 | 1990
Number of items: 7.

2009

Kugler, M. and Andlauer, T. and Korn, Tobias and Wagner, Christoph and Fehringer, S. and Schulz, Robert and Kubová, M. and Gerl, Christian and Schuh, Dieter and Wegscheider, Werner and Vogl, P. and Schüller, Christian (2009) Gate control of low-temperature spin dynamics in two-dimensional hole systems. Physical Review B (PRB) 80 (3), 035325. Fulltext restricted.
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2004

Schuster, Robert and Hajak, H. and Reinwald, Matthias and Wegscheider, Werner and Schedelbeck, Gert and Sedlmaier, S. and Stopa, M. and Birner, S. and Vogl, P. and Bauer, J. and Schuh, Dieter and Bichler, Max and Abstreiter, Gerhard (2004) Optical properties of low-dimensional semiconductor systems fabricated by cleaved edge overgrowth. physica status solidi (c) 1 (8), pp. 2028-2055. Fulltext restricted.
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Bougeard, Dominique and Tan, P. H. and Sabathil, M. and Vogl, P. and Abstreiter, Gerhard and Brunner, K. (2004) Resonant Raman scattering of discrete hole states in self-assembled Si/Ge quantum dots. Physica E 21, p. 312. Fulltext not available.

1993

Olajos, Janos and Abstreiter, Gerhard and Schorer, R. and Vogl, P. and Wegscheider, Werner (1993) Properties of Sn/Ge superlattices. Semiconductor Science and Technology 8 (1S ), pp. 6-8. Fulltext restricted.
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1992

Vogl, P. and Olajos, Janos and Wegscheider, Werner and Abstreiter, Gerhard (1992) Electronic structure and optical properties of short-period α-SnnGem superlattices. Surface Science 267 (1-3), pp. 83-86. Fulltext restricted.
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1991

Olajos, Janos and Vogl, P. and Wegscheider, Werner and Abstreiter, Gerhard (1991) Infrared optical properties and band structure of α-Sn/Ge superlattices on Ge substrates. Physical Review Letters 67 (22), pp. 3164-3167. Fulltext restricted.
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1990

Wegscheider, Werner and Eberl, Karl and Menczigar, U. and Olajos, Janos and Vogl, P. (1990) Highly strained alpha-Sn/Ge superlattices: new man-made semiconductors. In: Anastassakis, E. M., (ed.) 20th International Conference on the Physics of Semiconductor; Thessaloniki, Greece; August 6 - 10, 1990. Band 2. World Scientific, Singapur, pp. 1685-1688. ISBN 981-02-0290-3. Fulltext not available.

This list was generated on Thu Jun 30 05:12:11 2016 CEST.
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