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Publikationen von Yassievich, Irina

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Anzahl der Einträge: 53.

2003

Ganichev, Sergey, Danilov, Sergey, Sollinger, M., Zimmermann, J., Perel, V., Yassievich, Irina und Prettl, Wilhelm (2003) Magnetic field effect on tunnel ionization of deep impurities by terahertz radiation. In: 22nd International Conference on Defects in Semiconductors (ICDS-22), 28.Juli - 1. August 2003, Aarhus, Dänemark. Volltext nicht vorhanden.

Tarasenko, Sergey, Perel', V., Yassievich, Irina, Ganichev, Sergey, Belkov, Vassilij und Prettl, Wilhelm (2003) Spin-dependent tunnelling through a symmetric semiconductor barrier. In: Spintech II International Conference and School Semiconductor Spintronics and Quantum Information Technology, 04. - 08. August 2003, Brügge, Belgium. Volltext nicht vorhanden.

Ganichev, Sergey, Danilov, Sergey, Sollinger, M., Zimmermann, J., Perel, V., Yassievich, Irina und Prettl, Wilhelm (2003) Suppression of infrared radiation induced tunneling ionization of deep centers by external magnetic field. In: 27th Int. Conf. of Infrared and Millimeter Waves, Sendai, 2003, Sendai. Volltext nicht vorhanden.

2002

Ganichev, Sergey, Yassievich, Irina und Prettl, Wilhelm (2002) Tunneling ionization of deep centers in terahertz electric fields. Journal of Physics: Condensed Matter 14 (50), R1263 -R1295.

Ganichev, Sergey, Ketterl, H., Perel, V., Yassievich, Irina und Prettl, Wilhelm (2002) Tunneling ionization of deep centers in high-frequency electric fields. Physical Review B 65 (8), 085203.

Ganichev, Sergey, Yassievich, Irina und Prettl, Wilhelm (2002) Tunneling processes induced by terahertz electric fields. In: International THz-BRIDGE Workshop, 29. September - 02. Oktober 2002, Capri, Italy. Volltext nicht vorhanden.

2001

Ganichev, Sergey, Ketterl, Hermann, Prettl, Wilhelm, Merkulov, I., Perel, V., Yassievich, Irina und Malyshev, A. (2001) Giant negative magnetoresistance in semiconductors doped by multiply charged deep impurities. Physical Review B 63 (20), 201204(R).

Ganichev, Sergey, Ziemann, E., Yassievich, Irina, Perel, V. und Prettl, Wilhelm (2001) Characterization of deep impurities in semiconductors by terahertz tunneling ionization. Materials Science in Semiconductor Processing 4 (1-3), S. 281-284.

Ganichev, Sergey, Ketterl, Hermann, Prettl, Wilhelm, Merkulov, I., Perel, V., Yassievich, Irina und Malyshev, A. (2001) Giant negative magnetoresistance in germanium doped by multiply charged impurities. In: 21st International Conference on Defects in Semiconductors, 16. - 20. Juli 2001, Giessen, Germany. Volltext nicht vorhanden.

Ganichev, Sergey, Ketterl, Hermann, Perel, V., Yassievich, Irina und Prettl, Wilhelm (2001) High-frequency regime of electron tunneling. In: Miura, Noboru und Ando, T., (eds.) Proceedings of the 25th International Conference on the Physics of Semiconductors Part I / Part II. Springer Proceedings in Physics, 87. Springer, Berlin, S. 1435. ISBN 3-540-41778-8.

2000

Ziemann, E., Ganichev, Sergey, Yassievich, Irina, Perel, V. und Prettl, Wilhelm (2000) Characterization of deep impurities in semiconductors by terahertz tunneling ionization. Journal of Applied Physics 87 (8), S. 3843-3849.

Ganichev, Sergey, Ziemann, E., Yassievich, Irina, Prettl, Wilhelm, Istratov, A. und Weber, E. (2000) Distinction between the Poole-Frenkel and tunneling models of electric field-stimulated carrier emission from deep levels in semiconductors. Physical Review B 61 (15), S. 10361-10365.

Ganichev, Sergey, Ziemann, E., Yassievich, Irina, Perel, V. und Prettl, Wilhelm (2000) Characterization of deep impurities in semiconductors by terahertz tunneling ionization. In: European MRS - IUMRS - ICEM 2000: SYMPOSIUM M: Advanced Characterisation of Semiconductor Materials, 30. Mai – 2. Juni 2000, Strasbourg, France. Volltext nicht vorhanden.

Ganichev, Sergey, Ketterl, Hermann, Perel, V., Yassievich, Irina und Prettl, Wilhelm (2000) High-frequency regime of electron tunneling. In: 25th International Conference on the Physics of Semiconductors, 18. - 22. August 2000, Osaka, Japan. Volltext nicht vorhanden.

1999

Moskalenko, A. S., Ganichev, Sergey, Perel, V. I. und Yassievich, Irina (1999) Magnetic field effect on tunnel ionization of deep impurities by far-infrared radiation. Physica B 273-27, S. 1007-1010.

Ketterl, Hermann, Ziemann, E., Ganichev, Sergey, Belyaev, A., Schmult, Stefan, Prettl, Wilhelm und Yassievich, Irina (1999) Terahertz tunnel ionization of DX centers in AlGaAs:Te. Physica B 273-27, S. 766-769.

Ganichev, Sergey, Ziemann, E., Ketterl, Hermann, Prettl, Wilhelm, Yassievich, Irina, Perel, V., Wilke, I. und Haller, E. (1999) Carrier tunneling in high-frequency electric fields. In: Gershoni, David, (ed.) 24th International Conference on the Physics of Semiconductors: The physics of semiconductors; Jerusalem, Israel August 2 - 7, 1998. World Scientific, Singapore, S. 225. ISBN 981-02-3613-1.

Moskalenko, A., Ganichev, Sergey, Perel, V. und Yassievich, Irina (1999) Magnetic field effect on tunnel ionization of deep impurities by far-infrared radiation. In: 20th International Conference on Defects in Semiconductors (ICDS-20), 26. - 30. Juli 1999, Berkeley, USA. Volltext nicht vorhanden.

1998

Ganichev, Sergey, Ziemann, E., Gleim, T., Prettl, Wilhelm, Yassievich, Irina, Perel, V., Wilke, I. und Haller, E. (1998) Carrier tunneling in high-frequency electric fields. Physical Review Letters 80 (11), S. 2409-2412.

Ganichev, Sergey, Ziemann, E., Ketterl, H., Prettl, Wilhelm, Yassievich, Irina, Perel, V., Wilke, I. und Haller, E. (1998) Carrier tunneling in high-frequency electric fields. In: 24th International Conference on the Physics of Semiconductors (invited), 02. - 07. August 1998, Jerusalem, Israel. Volltext nicht vorhanden.

Ganichev, Sergey, Ziemann, E., Yassievich, Irina, Schmalz, K. und Prettl, Wilhelm (1998) Characterization of deep impurities in semiconductors by terahertz tunnel ionization. In: Ashok, S. und Chevallier, J. und Sumino, K. und Sopori, B. L. und Goetz, W., (eds.) Defect and impurity engineered semiconductors II: symposium held [at the 1998 MRS Spring Meeting], April 13-17, 1998, San Francisco, California, U.S.A. Materials Research Society symposium proceedings, 510. Materials Research Society, Warrendale, Pa., S. 595. ISBN 1-558-99416-5. Volltext nicht vorhanden.

Ziemann, E., Ganichev, Sergey, Yassievich, Irina und Prettl, Wilhelm (1998) Characterization of deep impurities in semiconductors by terahertz tunnel ionization. In: Defect and impurity engineered semiconductors II: MRS Spring Meeting, 13. - 17. April 1998, San-Francisco, California, USA. Volltext nicht vorhanden.

Ziemann, E., Ganichev, Sergey, Yassievich, Irina und Prettl, Wilhelm (1998) Charakterisierung tiefer Störstellen in Halbleitern durch Tunnel-ionisation in Terahertzfeldern. In: Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, 1998, Regensburg. Volltext nicht vorhanden.

Ganichev, Sergey, Ziemann, E., Ketterl, Hermann, Prettl, Wilhelm, Yassievich, Irina und Perel, V. (1998) Enhancement of tunnel ionization of deep impurities in semiconductors in a high frequency electric field of FIR laser radiation. In: Parker, Terence und Smith, S. R. P., (eds.) Proceedings of 23rd International Conference on Infrared and Millimeter Waves, Essex, UK. , S. 62. Volltext nicht vorhanden.

Ganichev, Sergey, Ziemann, E., Ketterl, Hermann, Prettl, Wilhelm, Yassievich, Irina und Perel, V. (1998) Enhancement of tunnel ionization of deep impurities in semiconductors in a high frequency electric field of FIR laser radiation. In: 23th International Conference on Infrared and Millimeter Waves,, 7. - 11. September 1998, Wivenhoe Park, Colchester, Essex, UK. Volltext nicht vorhanden.

1997

Ganichev, Sergey, Yassievich, Irina und Prettl, Wilhelm (1997) Ionization of deep impurities by far-infrared radiation. Physics of the Solid State 39 (11), S. 1703-1726.

Ganichev, Sergey, Yassievich, Irina, Raab, W., Zepezauer, E. und Prettl, Wilhelm (1997) Storage of electrons in shallow donor excited states of GaP:Te. Physical Review B (Rapid Communic.) 55 (15), S. 9243-9246.

Ganichev, Sergey, Yassievich, Irina, Raab, W., Zepezauer, E. und Prettl, Wilhelm (1997) Accumulation of carriers in a shallow donor excited state of GaP:Te. In: 19th International Conference on Defects in Semiconductors (ICDS-19), 21. - 25. Juli 1997, Aveiro, Porto, Portugal. Volltext nicht vorhanden.

Ganichev, Sergey, Ziemann, E., Gleim, T., Yassievich, Irina und Prettl, Wilhelm (1997) Frequency dependence of tunnel ionization of deep impurities in terahertz field. In: 19th International Conference on Defects in Semiconductors (ICDS-19), 21. - 25. Juli 1997, Aveiro, Porto, Portugal. Volltext nicht vorhanden.

Ganichev, Sergey, Ziemann, E., Gleim, T., Yassievich, Irina und Prettl, Wilhelm (1997) Frequency dependence of tunnel ionization of deep impurities in terahertz field. In: Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, 1997, Münster. Volltext nicht vorhanden.

Ganichev, Sergey, Yassievich, Irina und Prettl, Wilhelm (1997) Ionization of deep impurity centers by FIR radiation. In: 3rd Russian conference on semiconductor physics "Semiconductors-97" (invited), 01. - 05. Dezember 1997, Moskau, Russland. Volltext nicht vorhanden.

Ganichev, Sergey, Yassievich, Irina, Raab, W., Zepezauer, E. und Prettl, Wilhelm (1997) Long living shallow donor excited states and FIR-IR up-conversion in GaP:Te. In: Michel, Jürgen und Kennedy, Thomas und Wada, Kazumi und Thonke, Klaus, (eds.) Defects in electronic materials II. Materials Research Society symposium proceedings, 442. Materials Research Society, Pittsburgh, Pa., S. 465. ISBN 1-558-99346-0. Volltext nicht vorhanden.

Ganichev, Sergey, Yassievich, Irina, Raab, W., Zepezauer, E. und Prettl, Wilhelm (1997) Long-living shallow donor excited states of GaP:Te. In: Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, 1997, Münster. Volltext nicht vorhanden.

Ganichev, Sergey, Ziemann, E., Gleim, T., Yassievich, Irina und Prettl, Wilhelm (1997) Transition from semi-classical to quantum mechanical limit of terahertz ionization of deep impurities. In: 22nd International Conference on Infrared and Millimeter Waves, 20. - 25. Juli 1997, Wintergreen, USA. Volltext nicht vorhanden.

1996

Ganichev, Sergey, Yassievich, Irina und Prettl, Wilhelm (1996) Tunnel ionization of deep impurities by far-infrared radiation. Semiconductor Science and Technology 11 (5), S. 679-691.

Ganichev, Sergey, Yassievich, Irina und Prettl, Wilhelm (1996) Adiabatic potentials configuration of deep impurities distinguished by phonon assisted tunneling in FIR radiation fields. In: Scheffler, Matthias, (ed.) 23nd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21 - 26, 1996; proceedings. Band 4. World Scientific, Singapore, S. 2785-2788. ISBN 981-02-2777-9; 981-022936-4.

Ganichev, Sergey, Yassievich, Irina und Prettl, Wilhelm (1996) Adiabatic potentials configuration of deep impurities distinguished by phonon assisted tunneling in FIR radiation fields. In: 23th International Conference on the Physics of Semiconductors (ICPS-23), 21. - 26. Juli 1996, Berlin, Germany. Volltext nicht vorhanden.

Ganichev, Sergey, Yassievich, Irina, Raab, W., Zepezauer, E. und Prettl, Wilhelm (1996) Long living shallow donor excited states and FIR-IR up-conversion in GaP:Te. In: MRS Fall Meeting, Symposium Defects in Electronic Materials, 02. - 06. Dezember 1996, Boston, Massachusetts, USA. Volltext nicht vorhanden.

Ganichev, Sergey, Yassievich, Irina, Raab, W., Zepezauer, E. und Prettl, Wilhelm (1996) Recombination kinetic in GaP:Te investigated by phonon assisted tunneling in FIR fields. In: Ortenberg, Michael von und Mueller, Hans-Ulrich, (eds.) Conference proceedings / The 21st International Conference on Infrared and Millimeter waves: Berlin, July 14 - 19, 1996, Federal Republic of Germany. Humboldt-Universität, Berlin, CF2. ISBN 3-00-000800-4.

Ganichev, Sergey, Yassievich, Irina, Raab, W., Zepezauer, E. und Prettl, Wilhelm (1996) Recombination kinetic in GaP:Te investigated by phonon assisted tunneling in FIR fields. In: 21st International Conference on Infrared and Millimeter waves, 14. - 19. Juli 1996, Berlin, Germany. Volltext nicht vorhanden.

Ganichev, Sergey, Yassievich, Irina und Prettl, Wilhelm (1996) Tunnel ionization of deep impurities in semiconductors by intense FIR radiation. In: Ortenberg, Michael von und Mueller, Hans-Ulrich, (eds.) Conference proceedings / The 21st International Conference on Infrared and Millimeter waves: Berlin, July 14 - 19, 1996, Federal Republic of Germany. Humboldt-Universität, Berlin, CM7. ISBN 3-00-000800-4. Volltext nicht vorhanden.

Ganichev, Sergey, Yassievich, Irina und Prettl, Wilhelm (1996) Tunnel ionization of deep impurities in semiconductors by intense FIR radiation. In: 21st International Conference on Infrared and Millimeter waves (invited), 14. - 19. Juli 1996, Berlin, Germany. Volltext nicht vorhanden.

1995

Ganichev, Sergey, Diener, J., Yassievich, Irina, Prettl, Wilhelm, Meyer, B. und Benz, K. (1995) Tunnelling ionization of autolocalized DX- centers in terahertz fields. Physical Review Letters 75 (8), S. 1590-1593.

Ganichev, Sergey, Diener, J., Yassievich, Irina und Prettl, Wilhelm (1995) Poole-Frenkel Effect in Terahertz Electromagnetic Fields. Europhysics Letters 29 (4), S. 315-320.

Ganichev, Sergey, Diener, J., Yassievich, Irina, Prettl, Wilhelm, Meyer, B. und Benz, K. (1995) Direct evidence for autolocalization states of DX center in Al_{x}Ga_{(1-x)}Sb. In: Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, 1995, Berlin, Germany. Volltext nicht vorhanden.

Ganichev, Sergey, Diener, J., Yassievich, Irina, Prettl, Wilhelm, Meyer, B. und Benz, K. (1995) Direct experimental evidence of autolocalization nature of DX- centers. Material Science Forum 196-20, S. 1079-1084.

Ganichev, Sergey, Diener, J., Yassievich, Irina, Prettl, Wilhelm, Meyer, B. und Benz, K. (1995) Direct experimental evidence of autolocalization nature of DX- centers. In: 18th International Conference on Defects in Semiconductors, 23. - 28. Juli 1995, Sendai, Japan. Volltext nicht vorhanden.

Ganichev, Sergey, Mayerhofer, B., Diener, J., Yassievich, Irina und Prettl, Wilhelm (1995) Poole-Frenkel Ionization of Ge:Hg in Terahertz Electromagnetic Fields. Material Science Forum 196-20, S. 1543-1546.

Ganichev, Sergey, Mayerhofer, B., Diener, J., Yassievich, Irina und Prettl, Wilhelm (1995) Poole-Frenkel Ionization of Ge:Hg in Terahertz Electromagnetic Fields. In: 18th International Conference on Defects in Semiconductors, 23. - 28. Juli 1995, Sendai, Japan. Volltext nicht vorhanden.

1989

Beregulin, E., Ganichev, Sergey, Gloukh, K., Yaroshetskii, I. und Yassievich, Irina (1989) Saturation absorption in p-Ge of IR-FIR radiation and its technical utilization. In: MacMillan, Ann Simmons und Tucker, Gail M., (eds.) Conference digest / ICMWFT '89, International Conference on Millimeter Wave and Far-Infrared Technology: Dragon Spring Hotel Beijing, China June 19-23, 1989. Pergamon Press, Oxford, S. 597. ISBN 7-80003-063-6; 0-08-037880-3.

Beregulin, E., Ganichev, Sergey, Gloukh, K., Yaroshetskii, I. und Yassievich, Irina (1989) Saturation absorption in p-Ge of IR-FIR radiation and its technical utilization. In: International Conference on Millimeter Wave and Far-Infrared Technology, 19. - 23. Juni 1989, Bejing, China. Volltext nicht vorhanden.

1988

Ganichev, Sergey, Dmitriev, A., Emel'yanov, S., Terent'ev, Y., Yaroshetskii, I. und Yassievich, Irina (1988) Light impact ionization in semiconductors. In: 19th International Conference on the Physics of Semiconductors, 15. - 19. August 1988, Warsaw, Poland. Volltext nicht vorhanden.

Ganichev, Sergey, Dmitriev, A., Emel'yanov, S., Terent'ev, Y., Yaroshetskii, I. und Yassievich, Irina (1988) Light impact ionization in semiconductors. In: Zawadzki, Włodzimierz, (ed.) 19th International Conference on the Physics of Semiconductors. Band 2: Warsaw, Poland, Aug. 15-19, 1988. Institute of Physics, Polish Academy of Sciences, Warsaw, S. 1373-1376. ISBN 83-00-02465-4.

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