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Publications by Zepezauer, E.

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Jump to: 2000 | 1999 | 1998 | 1997 | 1996
Number of items: 17.

2000

Zepezauer, E. and Kalbeck, A. and Ganichev, Sergey and Korzenietz, W. and Prettl, Wilhelm (2000) Near-field induced FIR Josephson-detection by x-axis-oriented YBa_{2}Cu_{3}O_{7-d} -films. International Journal of Infrared and Millimeter Waves 21 (3), pp. 355-363.
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Zepezauer, E. and Shul'man, A. Ya. and Ganichev, S. D. and Kotel'nikov, I. N. and Dizhur, E. M. and Ormont, A. B. and Fedorov, Yu. V. and Prettl, Wilhelm (2000) Near-zone field enhanced ponderomotive action of FIR laser radiation on the tunnel current through a Schottky barrier. In: Frühjahrstagung der Deutschen-Physikalischen- Gesellschaft, 27. - 31. März 2000, Regensburg, Germany. Fulltext not available.

1999

Shul'man, A. and Ganichev, Sergey and Dizhur, E. and Kotel'nikov, I. and Zepezauer, E. and Prettl, Wilhelm (1999) Effect of electron heating and radiation pressure on tunneling across Schottky barrier due to giant near field of FIR radiation. Physica B 272 (1-4), pp. 442-447.
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Shul'man, A. and Ganichev, Sergey and Dizhur, E. and Kotel'nikov, I. and Zepezauer, E. and Prettl, Wilhelm (1999) Effect of electron heating and radiation pressure on tunneling across Schottky barrier due to giant near field of FIR radiation. In: 11. International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS), 19. - 23. Juli 1999, Kyoto, Japan. Fulltext not available.

Shul'man, A. and Kotel'nikov, I. and Ganichev, Sergey and Dizhur, E. and Ormont, A. and Zepezauer, E. and Prettl, Wilhelm (1999) Near field enhancement of photoresistive effect in n-GaAs tunnel Schottky junctions. In: Gershoni, David, (ed.) 24th International Conference on the Physics of Semiconductors: Jerusalem, Israel, August 2 - 7, 1998. World Scientific, Singapore, Th-P58. ISBN 981-02-4030-9.
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Shul'man, A. and Ganichev, Sergey and Kotel'nikov, I. and Dizhur, E. and Prettl, Wilhelm and Ormont, A. and Fedorov, Y. and Zepezauer, E. (1999) Near-zone field effect of FIR laser radiation on tunnel current through the Schottky barrier under plasma reflection condition. In: Workshop on Surface and Interface Optics '99 (SIO'99), 04. - 08. Mai 1999, Sainte-Maxime, France. Fulltext not available.

Shul'man, A. and Ganichev, Sergey and Kotel'nikov, I. and Dizhur, E. and Prettl, Wilhelm and Ormont, A. and Fedorov, Y. and Zepezauer, E. (1999) Near-zone field effect of FIR laser radiation on tunnel current through the Schottky barrier under plasma reflection condition. physica status solidi (a) 175 (1), pp. 289-296.
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1998

Kalbeck, A. and Zepezauer, E. and Ganichev, Sergey and Korzenietz, W. and Prettl, Wilhelm (1998) FIR-Detektion mit c-Achsen-orientierten epitaktischen YBCO-Schichten. In: Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, 1998, Regensburg. Fulltext not available.

Zepezauer, E. and Shul'man, A. and Kotel'nikov, I. and Ganichev, Sergey and Ormont, A. and Prettl, Wilhelm (1998) Nahfeld-Verstaerkung des photoresistiven Effektes in n-GaAs/Al-Schottky-Tunnelkontakten. In: Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, 1998, Regensburg. Fulltext not available.

Shul'man, A. and Kotel'nikov, I. and Ganichev, Sergey and Dizhur, E. and Ormont, A. and Zepezauer, E. and Prettl, Wilhelm (1998) Near field enhancement of photoresistive effect in n-GaAs tunnel Schottky junctions. In: 24th International Conference on the Physics of Semiconductors, 02. - 07. August 1998, Jerusalem, Israel. Fulltext not available.

1997

Ganichev, Sergey and Yassievich, Irina and Raab, W. and Zepezauer, E. and Prettl, Wilhelm (1997) Storage of electrons in shallow donor excited states of GaP:Te. Physical Review B (Rapid Communic.) 55 (15), pp. 9243-9246.
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Ganichev, Sergey and Yassievich, Irina and Raab, W. and Zepezauer, E. and Prettl, Wilhelm (1997) Accumulation of carriers in a shallow donor excited state of GaP:Te. In: 19th International Conference on Defects in Semiconductors (ICDS-19), 21. - 25. Juli 1997, Aveiro, Porto, Portugal. Fulltext not available.

Ganichev, Sergey and Yassievich, Irina and Raab, W. and Zepezauer, E. and Prettl, Wilhelm (1997) Long living shallow donor excited states and FIR-IR up-conversion in GaP:Te. In: Michel, Jürgen and Kennedy, Thomas and Wada, Kazumi and Thonke, Klaus, (eds.) Defects in electronic materials II. Materials Research Society symposium proceedings, 442. Materials Research Society, Pittsburgh, Pa., p. 465. ISBN 1-558-99346-0. Fulltext not available.

Ganichev, Sergey and Yassievich, Irina and Raab, W. and Zepezauer, E. and Prettl, Wilhelm (1997) Long-living shallow donor excited states of GaP:Te. In: Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, 1997, Münster. Fulltext not available.

1996

Ganichev, Sergey and Yassievich, Irina and Raab, W. and Zepezauer, E. and Prettl, Wilhelm (1996) Long living shallow donor excited states and FIR-IR up-conversion in GaP:Te. In: MRS Fall Meeting, Symposium Defects in Electronic Materials, 02. - 06. Dezember 1996, Boston, Massachusetts, USA. Fulltext not available.

Ganichev, Sergey and Yassievich, Irina and Raab, W. and Zepezauer, E. and Prettl, Wilhelm (1996) Recombination kinetic in GaP:Te investigated by phonon assisted tunneling in FIR fields. In: Ortenberg, Michael von and Mueller, Hans-Ulrich, (eds.) Conference proceedings / The 21st International Conference on Infrared and Millimeter waves: Berlin, July 14 - 19, 1996, Federal Republic of Germany. Humboldt-Universität, Berlin, CF2. ISBN 3-00-000800-4.
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Ganichev, Sergey and Yassievich, Irina and Raab, W. and Zepezauer, E. and Prettl, Wilhelm (1996) Recombination kinetic in GaP:Te investigated by phonon assisted tunneling in FIR fields. In: 21st International Conference on Infrared and Millimeter waves, 14. - 19. Juli 1996, Berlin, Germany. Fulltext not available.

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