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Number of items: 21.

B

Braun, Harald and Lauterbach, C. and Schwarz, Uli and Laino, V. and Witzigmann, B. and Rumbolz, C. and Schillgalies, M. and Lell, A. and Härle, V. (2007) Experimental and Theoretical Study of Substrate Modes in (Al,In)GaN Laser Diodes. phys. stat. sol. (c) 4, p. 2772.

E

Engl, Karl and Beer, Martin and Gmeinwieser, Nikolaus and Schwarz, Ulrich and Zweck, Josef and Wegscheider, Werner and Miller, S. and Miler, A. and Lugauer, H. and Brüderl, G. and Lell, A. and Härle, V. (2006) Influence of an in situ-deposited SiN_x intermediate layer inside GaN and AlGaN layers on SiC substrates. Journal of Crystal Growth 289 (1), pp. 6-13.

G

Gmeinwieser, N. and Schwarz, Uli (2007) Strain of single edge dislocations in bulk GaN. Physica Status Solidi (B).

Gmeinwieser, N. and Gottfriedsen, P. and Schwarz, Uli and Wegscheider, Werner and Clos, R. and Krtschil, A. and Krost, A. and Weimar, A. and Brüderl, G. and Lell, A. and Härle, V. (2005) Single dislocation induced strain in GaN. Journal of Appli ed Physics 98, p. 116102.

K

Kojima, K. and Funato, M. and Kawakami, Y. and Braun, Harald and Schwarz, Uli and Nagahama, S. and Mukai, T. (2007) Comparison between optical gain spectra of InxGa1-xN/In0.02Ga0.98N laser diodes emitting at 404 nm and 470 nm. phys. stat. sol. (a) 204, p. 2108.

Kojima, K. and Schwarz, Uli and Funato, M. and Kawakami, Y. and Nagahama, S. and Mukai, T. (2007) Optical gain spectra for near UV to aquamarine (Al,In)GaN laser diodes. Optics Express 15, p. 7730.

L

Laino, V. and Roemer, F. and Witzigmann, B. and Lauterbach, C. and Schwarz, Uli and Rumbolz, C. and Schillgalies, M. and Furitsch, M. and Lell, A. and Här, V. (2007) Experimental and theoretical study of substrate modes in (Al,In)GaN laser diodes. IEEE J. Quantum Electronics 43, p. 16.

Laubsch, A. and Sabathil, M. and Bruederl, G. and Wagner, J. and Strassburg, M. and Baur, E. and Braun, Harald and Schwarz, Uli and Lell, A. and Lutgen, S. and Linder, N. and Oberschmid, R. and Hahn, B. (2007) Measurement of the internal quantum efficiency of InGaN quantum wells. Proc. SPIE 6486, 64860J.

P

Pindl, M. and Schwarz, Uli (2006) Waveguide mode dynamics of blue laser diodes. phys. stat. sol. (a) 203, p. 1787.

S

Schwarz, Uli and Braun, Harald and Kojima, K. and Kawakami, Y. and Nagahama, S. and Mukai, T. (2007) Interplay of built-in potential and piezoelectric field on carrier recombination in green light emitting InGaN quantum wells. Applied Physics Letters 91, p. 123503.

Schwarz, Uli and Braun, Harald and Kojima, K. and Funato, M. and Kawakami, Y. and Nagahama, S. and Mukai, T. (2007) Investigation and comparison of optical gain spectra of (Al,In)GaN laser diodes emitting in the 375 nm to 470 nm spectral range. SPIE proceedings 6485, p. 648506.

Swietlik, T. and Franssen, G. and Czernecki, R. and Leszczynski, M. and Skierbiszewski, C. and Grzegory, I. and Bohdan, R. and Trzeciakowski, W. and Suski, T. and Perlin, P. and Lauterbach, C. and Schwarz, Uli (2007) Mode dynamics of high power (InAl)GaN based laser diodes grown on bulk GaN substrate. Journal of Appli ed Physics 101, 083109.

Schwarz, Uli and Witzigmann, B. (2007) Nitride Semiconductor Devices. In: Optical properties of edge-emitting lasers: measurement and simulation. Wiley-VCH.

Schwarz, Uli and Kneissl, M. (2007) Nitride emitters go nonpolar. phys. stat. solidi (RRL) 1, A44.

Schwarz, Uli (2007) Pattern formation and directional and spatial ordering of edge dislocations in bulk GaN: Micro-photoluminescence spectra and continuum elastic calculations. Physical Review B 75, p. 245213.

V

Vierheilig, Clemens and Braun, Harald and Schwarz, Uli and Wegscheider, Werner and Baur, E. and Strauß, U. and Härle, V. (2007) Lateral Diffusion of Photogenerated Carriers in InGaN/GaN-heterostructures Observed by PL Measurements. phys. stat. sol. (c) 4, p. 2362.

Vierheilig, Clemens and Braun, Harald and Schwarz, Uli and Wegscheider, Werner and Baur, E. and Strauß, U. and Härle, V. (2007) Temperature- and excitation density dependency of photoluminescence spectra in InGaN/GaN-heterostructures. phys. stat. sol. (c) 4, p. 179.

W

Witzigmann, B. and Laino, V. and Roemer, F. and Lauterbach, C. and Schwarz, Uli and Rumbolz, C. and Schillgalies, M. and Lell, A. and Härle, V. (2007) Analysis of substrate modes in GaN/InGaN Lasers. SPIE proceedings 6468, 64680Q.

Witzigmann, B. and Laino, V. and Luisier, M. and Schwarz, Uli and Feicht, Georg and Wegscheider, Werner and Engl, K. and Furitsch, M. and Leber, A. and Lell, A. and Härle, V. (2006) Microscopic analysis of optical gain in InGaN/GaN quantum wells. Applied Physics Letters 88, 021104.

Witzigmann, B. and Laino, V. and Luisier, M. and Schwarz, Uli and Fischer, H. and Feicht, Georg and Wegscheider, Werner and Rumbolz, C. and Lell, A. and Härle, V. (2006) Analysis of temperature dependent optical gain in GaN/InGaN quantum well structures. IEEE Phot. Tech. Lett. 18, p. 1600.

Witzigmann, B. and Laino, V. and Luisier, M. and Feicht, Georg and Schwarz, Uli (2006) Simulation and design of optical gain in In(Al)GaN/GaN short wavelength lasers. SPIE proceedings 6184, 61840E.

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