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Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures

Radek, Manuel, Liedke, Bartosz, Schmidt, Bernd, Voelskow, Matthias, Bischoff, Lothar, Hansen, John Lundsgaard, Larsen, Arne Nylandsted and Bougeard, Dominique (2017) Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures. Materials 10, p. 813.

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Date of publication of this fulltext: 03 Jul 2018 13:29

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Other URL: http://www.mdpi.com/1996-1944/10/7/813


Abstract

Crystalline and preamorphized isotope multilayers are utilized to investigate the dependence of ion beam mixing in silicon (Si), germanium (Ge), and silicon germanium (SiGe) on the atomic structure of the sample, temperature, ion flux, and electrical doping by the implanted ions. The magnitude of mixing is determined by secondary ion mass spectrometry. Rutherford backscattering spectrometry in ...

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Item type:Article
Date:2017
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard
Identification Number:
ValueType
10.3390/ma10070813DOI
Keywords:silicon; germanium; ion beam; atomic mixing; thermal spike; radiation enhanced diffusion; amorphization; recrystallization; molecular dynamics
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:37446
Owner only: item control page

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