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Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures

Radek, Manuel, Liedke, Bartosz, Schmidt, Bernd, Voelskow, Matthias, Bischoff, Lothar, Hansen, John Lundsgaard, Larsen, Arne Nylandsted and Bougeard, Dominique (2017) Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures. Materials 10, p. 813.

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Other URL: http://www.mdpi.com/1996-1944/10/7/813


Crystalline and preamorphized isotope multilayers are utilized to investigate the dependence of ion beam mixing in silicon (Si), germanium (Ge), and silicon germanium (SiGe) on the atomic structure of the sample, temperature, ion flux, and electrical doping by the implanted ions. The magnitude of mixing is determined by secondary ion mass spectrometry. Rutherford backscattering spectrometry in ...


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Item type:Article
Institutions:Physics > Institute of Experimental and Applied Physics > Chair Professor Huber > Group Dominique Bougeard
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Keywords:silicon; germanium; ion beam; atomic mixing; thermal spike; radiation enhanced diffusion; amorphization; recrystallization; molecular dynamics
Dewey Decimal Classification:500 Science > 530 Physics
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:37446
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