Anzahl der Einträge: 20.
Artikel
Ganichev, Sergey,
Ziemann, E.,
Yassievich, Irina,
Prettl, Wilhelm,
Istratov, A. und
Weber, E.
(2000)
Distinction between the Poole-Frenkel and tunneling models of electric field-stimulated carrier emission from deep levels in semiconductors.
Physical Review B 61 (15), S. 10361-10365.
Ketterl, Hermann,
Ziemann, E.,
Ganichev, Sergey,
Belyaev, A.,
Schmult, Stefan,
Prettl, Wilhelm und
Yassievich, Irina
(1999)
Terahertz tunnel ionization of DX centers in AlGaAs:Te.
Physica B 273-27, S. 766-769.
Ganichev, Sergey,
Ziemann, E.,
Gleim, T.,
Prettl, Wilhelm,
Yassievich, Irina,
Perel, V.,
Wilke, I. und
Haller, E.
(1998)
Carrier tunneling in high-frequency electric fields.
Physical Review Letters 80 (11), S. 2409-2412.
Buchkapitel
Ganichev, Sergey,
Ziemann, E.,
Ketterl, Hermann,
Prettl, Wilhelm,
Yassievich, Irina,
Perel, V.,
Wilke, I. und
Haller, E.
(1999)
Carrier tunneling in high-frequency electric fields.
In:
Gershoni, David, (ed.)
24th International Conference on the Physics of Semiconductors: The physics of semiconductors; Jerusalem, Israel August 2 - 7, 1998.
World Scientific, Singapore, S. 225.
ISBN 981-02-3613-1.
Ziemann, E.,
Ganichev, Sergey,
Prettl, Wilhelm,
Istratov, A. und
Weber, E.
(1999)
High field limitation of Poole-Frenkel emisson caused by tunneling.
In:
MacKittrick, Joanna, (ed.)
Luminescent materials: [Symposium E, "Luminescent Materials" held at the 1999 MRS Spring Meeting] ; symposium held April 5-8, 1999, San Francisco, California, U.S.A.
Materials research society symposium proceedings, 560.
Materials Research Society, Warrendale, Pa., S. 239.
ISBN 1-558-99467-X.
Volltext nicht vorhanden.
Ganichev, Sergey,
Ziemann, E.,
Yassievich, Irina,
Schmalz, K. und
Prettl, Wilhelm
(1998)
Characterization of deep impurities in semiconductors by terahertz tunnel ionization.
In:
Ashok, S. und
Chevallier, J. und
Sumino, K. und
Sopori, B. L. und
Goetz, W., (eds.)
Defect and impurity engineered semiconductors II: symposium held [at the 1998 MRS Spring Meeting], April 13-17, 1998, San Francisco, California, U.S.A.
Materials Research Society symposium proceedings, 510.
Materials Research Society, Warrendale, Pa., S. 595.
ISBN 1-558-99416-5.
Volltext nicht vorhanden.
Ganichev, Sergey,
Ziemann, E.,
Ketterl, Hermann,
Prettl, Wilhelm,
Yassievich, Irina und
Perel, V.
(1998)
Enhancement of tunnel ionization of deep impurities in semiconductors in a high frequency electric field of FIR laser radiation.
In:
Parker, Terence und
Smith, S. R. P., (eds.)
Proceedings of 23rd International Conference on Infrared and Millimeter Waves, Essex, UK.
, S. 62.
Volltext nicht vorhanden.
Konferenz- oder Workshop-Beitrag
Ganichev, Sergey,
Ziemann, E.,
Yassievich, Irina,
Perel, V. und
Prettl, Wilhelm
(2000)
Characterization of deep impurities in semiconductors by terahertz tunneling ionization.
In: European MRS - IUMRS - ICEM 2000: SYMPOSIUM M: Advanced Characterisation of Semiconductor Materials, 30. Mai – 2. Juni 2000, Strasbourg, France.
Volltext nicht vorhanden.
Ziemann, E.,
Ganichev, Sergey,
Prettl, Wilhelm,
Istratov, A. und
Weber, E.
(1999)
High field limitation of Poole-Frenkel emisson caused by tunneling.
In: MRS Spring Meeting, 05. - 08. April 1999, San-Francisco, California, USA.
Volltext nicht vorhanden.
Ketterl, Hermann,
Ziemann, E.,
Ganichev, Sergey,
Belyaev, A.,
Schmult, Stefan und
Prettl, Wilhelm
(1999)
Terahertz tunnel ionization of DX centers in AlGaAs:Te.
In: 20th International Conference on Defects in Semiconductors (ICDS-20), 26. - 30. Juli 1999, Berkeley, USA.
Volltext nicht vorhanden.
Ganichev, Sergey,
Ziemann, E.,
Ketterl, H.,
Prettl, Wilhelm,
Yassievich, Irina,
Perel, V.,
Wilke, I. und
Haller, E.
(1998)
Carrier tunneling in high-frequency electric fields.
In: 24th International Conference on the Physics of Semiconductors (invited), 02. - 07. August 1998, Jerusalem, Israel.
Volltext nicht vorhanden.
Ziemann, E.,
Ganichev, Sergey,
Yassievich, Irina und
Prettl, Wilhelm
(1998)
Characterization of deep impurities in semiconductors by terahertz tunnel ionization.
In: Defect and impurity engineered semiconductors II: MRS Spring Meeting, 13. - 17. April 1998, San-Francisco, California, USA.
Volltext nicht vorhanden.
Ganichev, Sergey,
Ziemann, E.,
Ketterl, Hermann,
Prettl, Wilhelm,
Yassievich, Irina und
Perel, V.
(1998)
Enhancement of tunnel ionization of deep impurities in semiconductors in a high frequency electric field of FIR laser radiation.
In: 23th International Conference on Infrared and Millimeter Waves,, 7. - 11. September 1998, Wivenhoe Park, Colchester, Essex, UK.
Volltext nicht vorhanden.
Ganichev, Sergey,
Ziemann, E.,
Gleim, T.,
Yassievich, Irina und
Prettl, Wilhelm
(1997)
Frequency dependence of tunnel ionization of deep impurities in terahertz field.
In: 19th International Conference on Defects in Semiconductors (ICDS-19), 21. - 25. Juli 1997, Aveiro, Porto, Portugal.
Volltext nicht vorhanden.
Ganichev, Sergey,
Ziemann, E.,
Gleim, T.,
Yassievich, Irina und
Prettl, Wilhelm
(1997)
Frequency dependence of tunnel ionization of deep impurities in terahertz field.
In: Fruehjahrstagung der Deutschen-Physikalischen-Gesellschaft, 1997, Münster.
Volltext nicht vorhanden.
Ganichev, Sergey,
Ziemann, E.,
Gleim, T.,
Yassievich, Irina und
Prettl, Wilhelm
(1997)
Transition from semi-classical to quantum mechanical limit of terahertz ionization of deep impurities.
In: 22nd International Conference on Infrared and Millimeter Waves, 20. - 25. Juli 1997, Wintergreen, USA.
Volltext nicht vorhanden.
Diese Liste wurde erzeugt am Sat Nov 23 09:16:42 2024 CET.