Elite Network of Bavaria (K-NW-2013-247)

Ringer, Sebastian Johannes (2019) Anisotropic spinrelaxation in graphene. PhD, Universität Regensburg.

Plank, Helene, Durnev, M. V. , Candussio, Susanne, Pernul, Johanna, Dantscher, Kathrin-Maria, Mönch, Erwin, Sandner, Andreas, Eroms, Jonathan , Weiss, Dieter, Belkov, Vassilij, Tarasenko, Sergey and Ganichev, Sergey (2018) Edge currents driven by terahertz radiation in graphene in quantum Hall regime. 2D Materials 1 (6), 0110021-0110027. Fulltext not available.

Ringer, Sebastian, Hartl, Stefan, Rosenauer, Matthias, Völkl, Tobias, Kadur, Maximilian, Hopperdietzel, Franz, Weiss, Dieter and Eroms, Jonathan (2018) Measuring anisotropic spin relaxation in graphene. Physical Review B (PRB) 97 (20), 205439-1-205439-9.

Plank, Helene, Tarasenko, S.A., Hummel, T., Knebl, G., Pfeffer, P., Kamp, M., Höfling, S. and Ganichev, Sergey (2017) Circular and linear photogalvanic effects in type-II GaSb/InAs quantum well structures in the inverted regime. Physica E: Low-dimensional Systems and Nanostructures 85, 193 - 198. Fulltext not available.

Plank, Helene, Golub, L. E. , Bauer, S., Bel'kov, V. V., Herrmann, Tobias, Olbrich, P., Eschbach, M., Plucinski, L. , Schneider, C. M. , Kampmeier, J., Lanius, M., Mussler, G., Grützmacher, D. and Ganichev, Sergey (2016) Photon drag effect in (Bi1−xSbx)2Te3 three-dimensional topological insulators. Phys. Rev. B 93 (12), p. 125434.

Egorova, S. G., Chernichkin, V. I, Ryabova, L. I., Skipetrov, E. P., Yashina, L. V., Danilov, S. N., Ganichev, Sergey and Khokhlov, D. R. (2015) Detection of highly conductive surface electron states in topological crystalline insulators Pb1−xSnxSe using laser terahertz radiation. Scientific Reports 5, p. 11540.

Olbrich, P., Golub, L. E., Herrmann, T., Danilov, S. N., Plank, H., Bel'kov, V. V., Mussler, G., Weyrich, Ch., Schneider, C. M., Kampmeier, J., Grützmacher, D., Plucinski, L., Eschbach, M. and Ganichev, Sergey (2014) Room-Temperature High-Frequency Transport of Dirac Fermions in Epitaxially Grown Sb2Te3- and Bi2Te3-Based Topological Insulators. Phys. Rev. Lett. 113, 096601. Fulltext not available.