Tse, W. and Fabian, Jaroslav and Zutic, I. and Sarma, S. (2005) Spin accumulation in the extrinsic spin hall effect. Physical Review B 72, p. 241303.
Full text not available from this repository.
Other URL: http://link.aps.org/abstract/PRB/v72/e241303
Bipolar spintronics, typically realized in systems which include semiconductors, is an emerging subfield of spintronics in which carriers of both polarities (electrons and holes) are important. In contrast to unipolar spintronics, characteristic for metallic systems, there are large deviations from local charge neutrality and intrinsic non-linearities in the current-voltage characteristics, which are important even at small applied bias. Together with the ease of manipulating the minority charge carriers (electrons and holes), these distinguishing features of bipolar spintronics are suitable for realizing active devices which could amplify signals and provide an additional degree of control not available in charge-based electronics. Spin-polarized bipolar transport can be thought of as a generalization of its unipolar counterpart. Specifically, spin-polarized unipolar transport can then be obtained as a limiting case by setting the electron-hole recombination rate to zero and considering only one type of carrier (either electrons or holes).
|Projects:||US ONR: Spin information processing and quantum computing|
|Subjects:||500 Science > 530 Physics|
|Refereed:||Yes, this version has been refereed|
|Created at the University of Regensburg:||Yes|
|Deposited On:||20 Mar 2007|
|Last Modified:||17 Nov 2009 05:13|
- ASCII Citation
- Dublin Core
- HTML Citation
- OAI-ORE Resource Map (Atom Format)
- OAI-ORE Resource Map (RDF Format)
- Reference Manager
- Simple Metadata
Literature of the same author