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Optical transitions in strained Ge/Si superlattices

Schmidt, U., Humlíček, J., Lukes, F., Cardona, M., Presting, H., Kibbel, H., Kasper, E., Eberl, Karl, Wegscheider, Werner and Abstreiter, Gerhard (1992) Optical transitions in strained Ge/Si superlattices. Thin Solid Films 222 (1-2), pp. 246-250.

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Band-to-band infrared absorption has been studied in a series of Sn1Gem (m=11, 15, and 21) strained layer superlattices for the first time. The absorption coefficient shows a quadratic increase with two onsets, characteristic for indirect transitions. From a numerical fit to the absorption spectra, band gap energies are determined in the energy range between 0.55 and 0.75 eV, in accordance with ...


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Item type:Article
Date:16 December 1992
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
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Dewey Decimal Classification:500 Science > 530 Physics
Created at the University of Regensburg:Unknown
Item ID:10005
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