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Olajos, Janos ; Abstreiter, Gerhard ; Schorer, R. ; Vogl, P. ; Wegscheider, Werner

Properties of Sn/Ge superlattices

Olajos, Janos, Abstreiter, Gerhard, Schorer, R., Vogl, P. and Wegscheider, Werner (1993) Properties of Sn/Ge superlattices. Semiconductor Science and Technology 8 (1S), pp. 6-8.

Date of publication of this fulltext: 26 Oct 2009 14:31
Article
DOI to cite this document: 10.5283/epub.10018


Abstract

Short-period strained-layer alpha -Sn/Ge superlattices have been synthesized recently by a low temperature molecular beam epitaxy technique which allows a large variation of substrate temperature. Thin, tetragonally distorted alpha Sn layers h ave been stabilized on Ge substrates by growth conditions far way from thermal equilibrium. The fundamental bandgap of Sn/Ge superlattices is shifted towards lower energies with increasing average Sn concentration, as expected from theory.



Involved Institutions


Details

Item typeArticle
Journal or Publication TitleSemiconductor Science and Technology
Publisher:Institute of Physics
Volume:8
Number of Issue or Book Chapter:1S
Page Range:pp. 6-8
Date1993
InstitutionsPhysics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Identification Number
ValueType
10.1088/0268-1242/8/1S/002DOI
Dewey Decimal Classification500 Science > 530 Physics
StatusPublished
RefereedUnknown
Created at the University of RegensburgUnknown
Item ID10018

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