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Properties of Sn/Ge superlattices

Olajos, Janos, Abstreiter, Gerhard, Schorer, R., Vogl, P. and Wegscheider, Werner (1993) Properties of Sn/Ge superlattices. Semiconductor Science and Technology 8 (1S), pp. 6-8.

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Short-period strained-layer alpha -Sn/Ge superlattices have been synthesized recently by a low temperature molecular beam epitaxy technique which allows a large variation of substrate temperature. Thin, tetragonally distorted alpha Sn layers h ave been stabilized on Ge substrates by growth conditions far way from thermal equilibrium. The fundamental bandgap of Sn/Ge superlattices is shifted towards lower energies with increasing average Sn concentration, as expected from theory.

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Item type:Article
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
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Dewey Decimal Classification:500 Science > 530 Physics
Created at the University of Regensburg:Unknown
Item ID:10018
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