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Properties of Sn/Ge superlattices

Olajos, Janos ; Abstreiter, Gerhard ; Schorer, R. ; Vogl, P. ; Wegscheider, Werner
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Date of publication of this fulltext: 26 Oct 2009 14:31


Abstract

Short-period strained-layer alpha -Sn/Ge superlattices have been synthesized recently by a low temperature molecular beam epitaxy technique which allows a large variation of substrate temperature. Thin, tetragonally distorted alpha Sn layers h ave been stabilized on Ge substrates by growth conditions far way from thermal equilibrium. The fundamental bandgap of Sn/Ge superlattices is shifted towards lower energies with increasing average Sn concentration, as expected from theory.


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