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Separately contacted electron-hole double layer in a GaAs/AlxGa1−xAs heterostructure
Article
Kane, B. E., Eisenstein, J. P., Wegscheider, Werner, Pfeiffer, Loren N. and West, Kenneth W. (1994) Separately contacted electron-hole double layer in a GaAs/AlxGa1−xAs heterostructure. Applied Physics Letters 65 (25), pp. 3266-3268.DOI to cite this document: 10.5283/epub.10834
Abstract
We describe a method for creating closely spaced parallel two-dimensional electron and hole gases confined in 200 Å GaAs wells separated by a 200 Å wide AlxGa1−xAs barrier. Low-temperature ohmic contacts are made to both the electrons and holes, whose densities are individually adjustable between 1010/cm2 to greater than 1011/cm2.
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| Item type | Article | ||||
| Journal or Publication Title | Applied Physics Letters | ||||
| Publisher | American Institute of Physics | ||||
| Volume | 65 | ||||
| Number of Issue or Book Chapter | 25 | ||||
| Page Range | pp. 3266-3268 | ||||
| Date | 19 December 1994 | ||||
| Date of publication | 02 Nov 2009 13:19 | ||||
| Institutions | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider | ||||
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| Dewey Decimal Classification | 500 Science > 530 Physics | ||||
| Status | Published | ||||
| Refereed | Unknown | ||||
| Created at the University of Regensburg | Unknown | ||||
| Item ID | 10834 |
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