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Separately contacted electron-hole double layer in a GaAs/AlxGa1−xAs heterostructure

DOI to cite this document:
Kane, B. E. ; Eisenstein, J. P. ; Wegscheider, Werner ; Pfeiffer, Loren N. ; West, Kenneth W.
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Date of publication of this fulltext: 02 Nov 2009 13:19


We describe a method for creating closely spaced parallel two-dimensional electron and hole gases confined in 200 Å GaAs wells separated by a 200 Å wide AlxGa1−xAs barrier. Low-temperature ohmic contacts are made to both the electrons and holes, whose densities are individually adjustable between 1010/cm2 to greater than 1011/cm2.

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