Separately contacted electron-hole double layer in a GaAs/AlxGa1−xAs heterostructure

Abstract

We describe a method for creating closely spaced parallel two-dimensional electron and hole gases confined in 200 Å GaAs wells separated by a 200 Å wide AlxGa1−xAs barrier. Low-temperature ohmic contacts are made to both the electrons and holes, whose densities are individually adjustable between 1010/cm2 to greater than 1011/cm2.