Wegscheider, Werner, Pfeiffer, Loren N., West, Kenneth W., Pinczuk, A., Dignam, M. M., Hull, R. and Leibenguth, R. E. (1995) GaAs/AlGaAs quantum wire lasers fabricated by cleaved edge overgrowth. Journal of Crystal Growth 150 (1), pp. 285-292.
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Abstract
We have used the molecular beam growth technique which we call “cleaved edge overgrowth” to fabricate quantum wire lasers, in which 1D quantum confinement is entirely defined by the growth process. The active region of our lasers consists of atomically precise quantum wires that form at the T-shaped intersections of 7 nm wide GaAs quantum wells grown along the [001] crystal axis and after an in ...
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| Item type: | Article | ||||
|---|---|---|---|---|---|
| Date: | 1 May 1995 | ||||
| Institutions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider | ||||
| Identification Number: |
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| Dewey Decimal Classification: | 500 Science > 530 Physics | ||||
| Status: | Published | ||||
| Refereed: | Unknown | ||||
| Created at the University of Regensburg: | Unknown | ||||
| Item ID: | 10835 |
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