GaAs/AlGaAs quantum wire lasers fabricated by cleaved edge overgrowth

DOI to cite this document:: 10.5283/epub.10835

Wegscheider, Werner ; Pfeiffer, Loren N. ; West, Kenneth W. ; Pinczuk, A. ; Dignam, M. M. ; Hull, R. ; Leibenguth, R. E.

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Date of publication of this fulltext: 02 Nov 2009 14:09

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Abstract

We have used the molecular beam growth technique which we call “cleaved edge overgrowth” to fabricate quantum wire lasers, in which 1D quantum confinement is entirely defined by the growth process. The active region of our lasers consists of atomically precise quantum wires that form at the T-shaped intersections of 7 nm wide GaAs quantum wells grown along the [001] crystal axis and after an in ...