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GaAs/AlGaAs quantum wire lasers fabricated by cleaved edge overgrowth

Wegscheider, Werner, Pfeiffer, Loren N., West, Kenneth W., Pinczuk, A., Dignam, M. M., Hull, R. and Leibenguth, R. E. (1995) GaAs/AlGaAs quantum wire lasers fabricated by cleaved edge overgrowth. Journal of Crystal Growth 150 (1), pp. 285-292.

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Abstract

We have used the molecular beam growth technique which we call “cleaved edge overgrowth” to fabricate quantum wire lasers, in which 1D quantum confinement is entirely defined by the growth process. The active region of our lasers consists of atomically precise quantum wires that form at the T-shaped intersections of 7 nm wide GaAs quantum wells grown along the [001] crystal axis and after an in ...

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Item type:Article
Date:1 May 1995
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1016/0022-0248(95)80222-XDOI
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Item ID:10835
Owner only: item control page

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