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Abstract
Characteristics of GaAs/AlGaAs quantum wire (QWR) lasers are studied for the first time under strong magnetic fields up to 12T. The QWR laser diodes have been fabricated by the molecular beam epitaxy technique, we call “cleaved edge overgrowth” (CEO), which combines conventional layer growth along the [001] crystal axis with high-quality regrowth on the (110) crystal face formed by an in situ ...
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