Single-electron transistor fabricated by focused laser beam-induced doping of a GaAs/AlGaAs heterostructure

DOI to cite this document:: 10.5283/epub.10837

Baumgartner, P. ; Wegscheider, Werner ; Bichler, Max ; Schedelbeck, G. ; Neumann, Richard ; Abstreiter, Gerhard

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Date of publication of this fulltext: 02 Nov 2009 13:20

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Abstract

A single-electron transistor has been fabricated by an optical fabrication method. A small dot, a source and drain reservoir, and in-plane gates are all built from the two-dimensional electron gas of an n-type GaAs/AlGaAs heterostructure. Laser-written p-doped lines are used to define this dot with a diameter of about 70 nm and to insulate it from the in-plane gates. Tunnel junctions connect the ...