Baumgartner, P., Wegscheider, Werner, Bichler, Max, Schedelbeck, G., Neumann, Richard und Abstreiter, Gerhard
Single-electron transistor fabricated by focused laser beam-induced doping of a GaAs/AlGaAs heterostructure.
Applied Physics Letters 70 (16), S. 2135-2137.
Zum Artikel beim Verlag (über DOI)
A single-electron transistor has been fabricated by an optical fabrication method. A small dot, a source and drain reservoir, and in-plane gates are all built from the two-dimensional electron gas of an n-type GaAs/AlGaAs heterostructure. Laser-written p-doped lines are used to define this dot with a diameter of about 70 nm and to insulate it from the in-plane gates. Tunnel junctions connect the ...
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