Atomically Precise GaAs/AlGaAs Quantum Dots Fabricated by Twofold Cleaved Edge Overgrowth

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.10840

Wegscheider, Werner ; Schedelbeck, G. ; Abstreiter, Gerhard ; Rother, M. ; Bichler, Max

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Veröffentlichungsdatum dieses Volltextes: 02 Nov 2009 13:23

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The formation of a 7×7×7 nm3 size GaAs quantum dot (QD) at the intersection of three quantum wells is demonstrated for the first time. Intense radiative recombination between zero-dimensional states in the QDs is clearly identified by microscopic photoluminescence ( μPL). In contrast to the inhomogeneously broadened quantum well and quantum wire signals originating from the complex twofold ...