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- DOI zum Zitieren dieses Dokuments:
- 10.5283/epub.10881
Alternative Links zum Volltext:DOI
Zusammenfassung
The surface of shallow Ga[Al]As heterostructures is locally oxidized with an atomic force microscope. The electron gas underneath the oxide is depleted. We demonstrate experimentally that these depleted regions of the two-dimensional electron gas can be made highly resistive at liquid nitrogen temperatures. Thus, local anodic oxidation of high electron mobility transistors with an atomic force ...
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