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Lateral tunneling through the controlled barrier between edge channels in a two-dimensional electron system

Shashkin, A. A., Dolgopolov, V. T., Deviatov, E. V., Irmer, B., Haubrich, A. G. C., Kotthaus, J .P., Bichler, Max and Wegscheider, Werner (1999) Lateral tunneling through the controlled barrier between edge channels in a two-dimensional electron system. JETP Letters 69 (8), pp. 603-609.

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Abstract

A study is made of the lateral tunneling between edge channels at the depletion-induced edges of a gated two-dimensional electron system, through a gate-voltage-controlled barrier arising when the donor layer of the heterostructure is partly removed along a fine strip by means of an atomic force microscope. For a sufficiently high barrier the typical current-voltage characteristic is found to be ...

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Item type:Article
Date:25 April 1999
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1134/1.567967DOI
Classification:
NotationType
73.40.Gk - 73.40.HmPACS
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Item ID:11011
Owner only: item control page

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