Shashkin, A. A., Dolgopolov, V. T., Deviatov, E. V., Irmer, B., Haubrich, A. G. C., Kotthaus, J .P., Bichler, Max und Wegscheider, Werner
Lateral tunneling through the controlled barrier between edge channels in a two-dimensional electron system.
JETP Letters 69 (8), S. 603-609.
Zum Artikel beim Verlag (über DOI)
A study is made of the lateral tunneling between edge channels at the depletion-induced edges of a gated two-dimensional electron system, through a gate-voltage-controlled barrier arising when the donor layer of the heterostructure is partly removed along a fine strip by means of an atomic force microscope. For a sufficiently high barrier the typical current-voltage characteristic is found to be ...
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