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Semiconductor nanostructures with short depletion length and stacked gates, patterned with an atomic force microscope

DOI to cite this document:
10.5283/epub.11039
Heinzel, Thomas H. ; Held, R. ; Lüscher, S. ; Ensslin, Klaus ; Wegscheider, Werner
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Date of publication of this fulltext: 30 Nov 2009 13:22


Abstract

We have investigated the electronic properties of the confining potentials obtained by oxidizing the surface of Ga[Al]As heterostructures with an atomic force microscope. From magnetotransport measurements on quantum wires at liquid-helium temperatures we find an extremely small lateral depletion length of (15±5) nm as well as a specularity of the boundary scattering above 95%. Furthermore, we ...

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