Lüscher, S., Fuhrer, A., Held, R., Heinzel, Thomas H., Ensslin, Klaus, Wegscheider, Werner and Bichler, Max (2000) In-plane Gate Single Electron Transistor Fabricated by AFM Lithography. Journal of Low Temperature Physics 118 (5-6), pp. 333-342.
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Abstract
Coulomb blockade is observed in semiconductor quantum dotsfabricated by scanning probe lithography. We demonstrate thatby combining top gates with in-plane gates, the lithographicshape of a dot can be transferred into the electron gas withhigh accuracy. Furthermore, by applying voltages to the in-plane gates, the number of electrons on the dot can be changedby more than 70 without changing its ...
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| Item type: | Article | ||||
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| Date: | May 2000 | ||||
| Institutions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider | ||||
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| Dewey Decimal Classification: | 500 Science > 530 Physics | ||||
| Status: | Published | ||||
| Refereed: | Unknown | ||||
| Created at the University of Regensburg: | Unknown | ||||
| Item ID: | 11041 |
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