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In-plane Gate Single Electron Transistor Fabricated by AFM Lithography

Lüscher, S., Fuhrer, A., Held, R., Heinzel, Thomas H., Ensslin, Klaus, Wegscheider, Werner and Bichler, Max (2000) In-plane Gate Single Electron Transistor Fabricated by AFM Lithography. Journal of Low Temperature Physics 118 (5-6), pp. 333-342.

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Coulomb blockade is observed in semiconductor quantum dotsfabricated by scanning probe lithography. We demonstrate thatby combining top gates with in-plane gates, the lithographicshape of a dot can be transferred into the electron gas withhigh accuracy. Furthermore, by applying voltages to the in-plane gates, the number of electrons on the dot can be changedby more than 70 without changing its ...


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Item type:Article
Date:May 2000
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Identification Number:
73.23 HK, 85.40 Ux, 85.30 Vx, 85.40 HpPACS
Dewey Decimal Classification:500 Science > 530 Physics
Created at the University of Regensburg:Unknown
Item ID:11041
Owner only: item control page


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