In-plane Gate Single Electron Transistor Fabricated by AFM Lithography

DOI to cite this document:: 10.5283/epub.11041

Lüscher, S. ; Fuhrer, A. ; Held, R. ; Heinzel, Thomas H. ; Ensslin, Klaus ; Wegscheider, Werner ; Bichler, Max

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Date of publication of this fulltext: 30 Nov 2009 13:23

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Abstract

Coulomb blockade is observed in semiconductor quantum dotsfabricated by scanning probe lithography. We demonstrate thatby combining top gates with in-plane gates, the lithographicshape of a dot can be transferred into the electron gas withhigh accuracy. Furthermore, by applying voltages to the in-plane gates, the number of electrons on the dot can be changedby more than 70 without changing its ...