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Electronic properties of nanostructures defined in Ga[Al]As heterostructures by local oxidation

DOI to cite this document:
10.5283/epub.11168
Heinzel, Thomas ; Held, R. ; Lüscher, S. ; Ensslin, Klaus ; Wegscheider, Werner ; Bichler, Max
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Date of publication of this fulltext: 30 Nov 2009 13:35


Abstract

Tunable nanostructures can be patterned in Ga[Al]As heterostructures with an atomic force microscope (AFM). Oxidizing the GaAs cap layer locally by applying a voltage to the AFM tip leads to depletion of the electron gas underneath the oxide. Here, we describe this type of AFM lithography as a tool to fabricate tunable nanostructures and characterize the electronic properties of the resulting ...

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