Transport properties of quantum dots with steep walls

DOI to cite this document:: 10.5283/epub.11175

Fuhrer, A. ; Lüscher, S. ; Heinzel, Thomas ; Ensslin, Klaus ; Wegscheider, Werner ; Bichler, Max

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Date of publication of this fulltext: 30 Nov 2009 13:44

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Abstract

Quantum dots are fabricated in a Ga[Al]As heterostructure by local oxidation with an atomic force microscope. This technique, in combination with top gate voltages, allows us to generate small lateral depletion lengths. The confinement is characterized by low-temperature magnetotransport measurements, from which the dots energy spectrum is reconstructed. We find that in small dots the addition ...