Miniband transport in vertical superlattice field-effect transistors

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.11183

Deutschmann, R. A. ; Wegscheider, Werner ; Rother, Martin ; Bichler, Max ; Abstreiter, Gerhard

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Veröffentlichungsdatum dieses Volltextes: 30 Nov 2009 13:57

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Zusammenfassung

We study the nonequilibrium transport of two-dimensional electrons through a periodic potential. Our samples are fabricated using the cleaved-edge overgrowth technique to provide a vertical field-effect transistor with an undoped GaAs/AlGaAs superlattice channel orthogonal to the current flow. We find a pronounced negative differential resistance, the magnitude of which increases with increasing ...