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Smet, J. H. ; Deutschmann, R. A. ; Ertl, F. ; Wegscheider, Werner ; Abstreiter, Gerhard ; Klitzing, Klaus von

Gate-voltage control of spin interactions between electrons and nuclei in a semiconductor

Smet, J. H., Deutschmann, R. A., Ertl, F., Wegscheider, Werner, Abstreiter, Gerhard und Klitzing, Klaus von (2002) Gate-voltage control of spin interactions between electrons and nuclei in a semiconductor. Nature 415, S. 281-286.

Veröffentlichungsdatum dieses Volltextes: 30 Nov 2009 14:11
Artikel
DOI zum Zitieren dieses Dokuments: 10.5283/epub.11190


Zusammenfassung

Semiconductors are ubiquitous in device electronics, because their charge distributions can be conveniently manipulated with voltages to perform logic operations. Achieving a similar level of control over the spin degrees of freedom, either from electrons or nuclei, could provide intriguing prospects for both information processing and the study of fundamental solid-state physics issues. Here we ...

Semiconductors are ubiquitous in device electronics, because their charge distributions can be conveniently manipulated with voltages to perform logic operations. Achieving a similar level of control over the spin degrees of freedom, either from electrons or nuclei, could provide intriguing prospects for both information processing and the study of fundamental solid-state physics issues. Here we report procedures that carry out the controlled transfer of spin angular momentum between electrons-confined to two dimensions and subjected to a perpendicular magnetic field-and the nuclei of the host semiconductor, using gate voltages only. We show that the spin transfer rate can be enhanced near a ferromagnetic ground state of the electron system, and that the induced nuclear spin polarization can be subsequently stored and 'read out'. These techniques can also be combined into a spectroscopic tool to detect the low-energy collective excitations in the electron system that promote the spin transfer. The existence of such excitations is contingent on appropriate electron-electron correlations, and these can be tuned by changing, for example, the electron density via a gate voltage.



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Details

DokumentenartArtikel
Titel eines Journals oder einer ZeitschriftNature
Verlag:NATURE PUBLISHING GROUP
Ort der Veröffentlichung:LONDON
Band:415
Seitenbereich:S. 281-286
Datum17 Januar 2002
InstitutionenPhysik > Institut für Experimentelle und Angewandte Physik > Entpflichtete oder im Ruhestand befindliche Professoren > Arbeitsgruppe Werner Wegscheider
Identifikationsnummer
WertTyp
10.1038/415281aDOI
Stichwörter / KeywordsOPTICALLY PUMPED NMR; GAAS QUANTUM-WELLS; LEVEL FILLING NU=1; PHASE-TRANSITIONS; COMPUTATION; EXCITATIONS; SKYRMIONS; RESONANCE;
Dewey-Dezimal-Klassifikation500 Naturwissenschaften und Mathematik > 530 Physik
StatusVeröffentlicht
BegutachtetUnbekannt / Keine Angabe
An der Universität Regensburg entstandenUnbekannt / Keine Angabe
Dokumenten-ID11190

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