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Gate-voltage control of spin interactions between electrons and nuclei in a semiconductor

DOI to cite this document:
10.5283/epub.11190
Smet, J. H. ; Deutschmann, R. A. ; Ertl, F. ; Wegscheider, Werner ; Abstreiter, Gerhard ; Klitzing, Klaus von
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Date of publication of this fulltext: 30 Nov 2009 14:11


Abstract

Semiconductors are ubiquitous in device electronics, because their charge distributions can be conveniently manipulated with voltages to perform logic operations. Achieving a similar level of control over the spin degrees of freedom, either from electrons or nuclei, could provide intriguing prospects for both information processing and the study of fundamental solid-state physics issues. Here we ...

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