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Smet, J. H. ; Deutschmann, R. A. ; Ertl, F. ; Wegscheider, Werner ; Abstreiter, Gerhard ; Klitzing, Klaus von

Gate-voltage control of spin interactions between electrons and nuclei in a semiconductor

Smet, J. H., Deutschmann, R. A., Ertl, F., Wegscheider, Werner, Abstreiter, Gerhard and Klitzing, Klaus von (2002) Gate-voltage control of spin interactions between electrons and nuclei in a semiconductor. Nature 415, pp. 281-286.

Date of publication of this fulltext: 30 Nov 2009 14:11
Article
DOI to cite this document: 10.5283/epub.11190


Abstract

Semiconductors are ubiquitous in device electronics, because their charge distributions can be conveniently manipulated with voltages to perform logic operations. Achieving a similar level of control over the spin degrees of freedom, either from electrons or nuclei, could provide intriguing prospects for both information processing and the study of fundamental solid-state physics issues. Here we ...

Semiconductors are ubiquitous in device electronics, because their charge distributions can be conveniently manipulated with voltages to perform logic operations. Achieving a similar level of control over the spin degrees of freedom, either from electrons or nuclei, could provide intriguing prospects for both information processing and the study of fundamental solid-state physics issues. Here we report procedures that carry out the controlled transfer of spin angular momentum between electrons-confined to two dimensions and subjected to a perpendicular magnetic field-and the nuclei of the host semiconductor, using gate voltages only. We show that the spin transfer rate can be enhanced near a ferromagnetic ground state of the electron system, and that the induced nuclear spin polarization can be subsequently stored and 'read out'. These techniques can also be combined into a spectroscopic tool to detect the low-energy collective excitations in the electron system that promote the spin transfer. The existence of such excitations is contingent on appropriate electron-electron correlations, and these can be tuned by changing, for example, the electron density via a gate voltage.



Involved Institutions


Details

Item typeArticle
Journal or Publication TitleNature
Publisher:NATURE PUBLISHING GROUP
Place of Publication:LONDON
Volume:415
Page Range:pp. 281-286
Date17 January 2002
InstitutionsPhysics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Identification Number
ValueType
10.1038/415281aDOI
KeywordsOPTICALLY PUMPED NMR; GAAS QUANTUM-WELLS; LEVEL FILLING NU=1; PHASE-TRANSITIONS; COMPUTATION; EXCITATIONS; SKYRMIONS; RESONANCE;
Dewey Decimal Classification500 Science > 530 Physics
StatusPublished
RefereedUnknown
Created at the University of RegensburgUnknown
Item ID11190

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