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Combined atomic force microscope and electron-beam lithography used for the fabrication of variable-coupling quantum dots

Rogge, M. C., Fühner, C., Keyser, U. F., Haug, R. J., Bichler, Max, Abstreiter, Gerhard and Wegscheider, Werner (2003) Combined atomic force microscope and electron-beam lithography used for the fabrication of variable-coupling quantum dots. Applied Physics Letters 83 (6), pp. 1163-1165.

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Abstract

We have combined direct nanofabrication by local anodic oxidation with conventional electron-beam lithography to produce a parallel double quantum dot based on a GaAs/AlGaAs heterostructure. The combination of both nanolithography methods allows fabrication of robust in-plane gates and Cr/Au top-gate electrodes on the same device for optimal controllability. This is illustrated by the tunability ...

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Item type:Article
Date:11 August 2003
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1063/1.1599972DOI
Related URLs:
URLURL Type
http://link.aip.org/link/?APPLAB/83/1163/1Publisher
Classification:
NotationType
81.16.Nd; 81.16.Ta; 81.07.Ta; 81.05.Ea; 68.47.Fg; 68.65.Hb; 85.40.Hp; 81.65.MqPACS
Keywords:gallium arsenide, aluminium compounds, III-V semiconductors, semiconductor quantum dots, atomic force microscopy, electron beam lithography, nanolithography, anodisation
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Item ID:11353
Owner only: item control page

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