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Strongly confined quantum wire states in strained T-shaped GaAs/InAlAs structures

Schuster, Robert, Hajak, H., Reinwald, Matthias, Wegscheider, Werner, Schuh, Dieter, Bichler, Max and Abstreiter, Gerhard (2004) Strongly confined quantum wire states in strained T-shaped GaAs/InAlAs structures. Physica E Low-dimensional Systems and Nanostructures 21 (2-4), pp. 236-240.

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The confinement energy of T-shaped quantum wires (QWRs), which were fabricated by the cleaved edge overgrowth technique in a way that the QWRs form at the intersection of In0.2Al0.8As stressor layers and the overgrown (1 1 0) GaAs quantum well (QW), is examined using micro-photoluminescence spectroscopy. Photoluminescence (PL) signals from individual QWRs can be spatially resolved, since the ...


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Item type:Article
Date:March 2004
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Identification Number:
78.55.Cr; 78.67.Lt; 73.21.HbPACS
Keywords:Confinement energy; Quantum wires; Cleaved edge overgrowth; Micro-photoluminescence; Strain
Dewey Decimal Classification:500 Science > 530 Physics
Created at the University of Regensburg:Unknown
Item ID:11800
Owner only: item control page


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