Strongly confined quantum wire states in strained T-shaped GaAs/InAlAs structures

DOI zum Zitieren dieses Dokuments:: 10.5283/epub.11800

Schuster, Robert ; Hajak, H. ; Reinwald, Matthias ; Wegscheider, Werner ; Schuh, Dieter ; Bichler, Max ; Abstreiter, Gerhard

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Veröffentlichungsdatum dieses Volltextes: 11 Jan 2010 13:02

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Zusammenfassung

The confinement energy of T-shaped quantum wires (QWRs), which were fabricated by the cleaved edge overgrowth technique in a way that the QWRs form at the intersection of In0.2Al0.8As stressor layers and the overgrown (1 1 0) GaAs quantum well (QW), is examined using micro-photoluminescence spectroscopy. Photoluminescence (PL) signals from individual QWRs can be spatially resolved, since the ...