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Long relaxation times of holes in Si/SiGe quantum cascade structures with a diagonal intersubband transition

Bormann, I., Brunner, K., Hackenbuchner, S., Riedl, H., Schmult, Stefan, Wegscheider, Werner and Abstreiter, Gerhard (2004) Long relaxation times of holes in Si/SiGe quantum cascade structures with a diagonal intersubband transition. Physica E Low-dimensional Systems and Nanostructures 21 (2-4), pp. 779-782.

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Abstract

In this work we investigate experimentally and theoretically the feasibility to enhance the nonradiative lifetime of the upper heavy hole state in Si/SiGe quantum cascade (QC) structures within a diagonal transition design. The problem of fast nonradiative optical phonon scattering makes it impossible to achieve population inversion with recently demonstrated Si/SiGe QC mid-infrared emitter ...

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Item type:Article
Date:March 2004
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1016/j.physe.2003.11.123DOI
Classification:
NotationType
78.66.Db; 78.60.−b; 78.67.Pt; 72.10.DiPACS
Keywords:Si; SiGe; Electroluminescence; Quantum cascade; Phonon scattering
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Item ID:11816
Owner only: item control page

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