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Growth of crack-free GaN on Si(1 1 1) with graded AlGaN buffer layers
Able, Andreas, Wegscheider, Werner, Engl, Karl and Zweck, Josef (2005) Growth of crack-free GaN on Si(1 1 1) with graded AlGaN buffer layers. Journal of Crystal Growth 276 (3-4), pp. 415-418.Date of publication of this fulltext: 11 Jan 2010 13:33
Article
DOI to cite this document: 10.5283/epub.11960
Abstract
Hexagonal GaN films on Si(1 1 1) substrates have been grown by metalorganic vapor phase epitaxy (MOVPE). High-temperature AlN buffers provided a reliable diffusion barrier to avoid meltback etching. By introducing a thick, graded AlGaN buffer layer, the critical thickness for cracking has been increased to at least 2µm. The films have been characterized by optical microscopy, transmission electron microscopy (TEM) and X-ray diffraction.
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| Item type | Article | ||||
| Journal or Publication Title | Journal of Crystal Growth | ||||
| Publisher: | Elsevier | ||||
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| Volume: | 276 | ||||
| Number of Issue or Book Chapter: | 3-4 | ||||
| Page Range: | pp. 415-418 | ||||
| Date | April 2005 | ||||
| Institutions | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider | ||||
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| Classification |
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| Keywords | A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III–V materials | ||||
| Dewey Decimal Classification | 500 Science > 530 Physics | ||||
| Status | Published | ||||
| Refereed | Unknown | ||||
| Created at the University of Regensburg | Unknown | ||||
| Item ID | 11960 |
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