Able, Andreas, Wegscheider, Werner, Engl, Karl und Zweck, Josef
Growth of crack-free GaN on Si(1 1 1) with graded AlGaN buffer layers.
Journal of Crystal Growth 276 (3-4), S. 415-418.
Zum Artikel beim Verlag (über DOI)
Hexagonal GaN films on Si(1 1 1) substrates have been grown by metalorganic vapor phase epitaxy (MOVPE). High-temperature AlN buffers provided a reliable diffusion barrier to avoid meltback etching. By introducing a thick, graded AlGaN buffer layer, the critical thickness for cracking has been increased to at least 2µm. The films have been characterized by optical microscopy, transmission electron microscopy (TEM) and X-ray diffraction.
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