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Growth of crack-free GaN on Si(1 1 1) with graded AlGaN buffer layers

DOI to cite this document:
Able, Andreas ; Wegscheider, Werner ; Engl, Karl ; Zweck, Josef
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Date of publication of this fulltext: 11 Jan 2010 13:33


Hexagonal GaN films on Si(1 1 1) substrates have been grown by metalorganic vapor phase epitaxy (MOVPE). High-temperature AlN buffers provided a reliable diffusion barrier to avoid meltback etching. By introducing a thick, graded AlGaN buffer layer, the critical thickness for cracking has been increased to at least 2µm. The films have been characterized by optical microscopy, transmission electron microscopy (TEM) and X-ray diffraction.

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