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Growth of crack-free GaN on Si(1 1 1) with graded AlGaN buffer layers

Able, Andreas, Wegscheider, Werner, Engl, Karl and Zweck, Josef (2005) Growth of crack-free GaN on Si(1 1 1) with graded AlGaN buffer layers. Journal of Crystal Growth 276 (3-4), pp. 415-418.

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Hexagonal GaN films on Si(1 1 1) substrates have been grown by metalorganic vapor phase epitaxy (MOVPE). High-temperature AlN buffers provided a reliable diffusion barrier to avoid meltback etching. By introducing a thick, graded AlGaN buffer layer, the critical thickness for cracking has been increased to at least 2µm. The films have been characterized by optical microscopy, transmission electron microscopy (TEM) and X-ray diffraction.

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Item type:Article
Date:April 2005
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Identification Number:
81.05.Ea; 81.15.GhPACS
Keywords:A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III–V materials
Dewey Decimal Classification:500 Science > 530 Physics
Created at the University of Regensburg:Unknown
Item ID:11960
Owner only: item control page


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