Go to content
UR Home

Topological defects in the edge-state structure in a bilayer electron system

DOI to cite this document:
Deviatov, E. V. ; Dolgopolov, V. T. ; Würtz, A. ; Wixforth, A. ; Wegscheider, Werner ; Campman, K. L. ; Gossard, A. C.
(188kB) - Repository staff only
Date of publication of this fulltext: 11 Jan 2010 13:35


We experimentally demonstrate formation of pointlike topological defects in the edge-state structure in the quantum Hall effect regime. By using of a selective population technique, we investigate equilibration processes between the edge states in bilayer electron structures with a high tunneling rate between layers. Unexpected flattening of the I-V curves in a perpendicular magnetic field at a ...


Owner only: item control page
  1. Homepage UR

University Library

Publication Server


Publishing: oa@ur.de
0941 943 -4239 or -69394

Dissertations: dissertationen@ur.de
0941 943 -3904

Research data: datahub@ur.de
0941 943 -5707

Contact persons