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Topological defects in the edge-state structure in a bilayer electron system

Deviatov, E. V., Dolgopolov, V. T., Würtz, A., Wixforth, A., Wegscheider, Werner, Campman, K. L. and Gossard, A. C. (2005) Topological defects in the edge-state structure in a bilayer electron system. Physical Review B (PRB) 72 (4), 041305R.

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Abstract

We experimentally demonstrate formation of pointlike topological defects in the edge-state structure in the quantum Hall effect regime. By using of a selective population technique, we investigate equilibration processes between the edge states in bilayer electron structures with a high tunneling rate between layers. Unexpected flattening of the I-V curves in a perpendicular magnetic field at a ...

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Item type:Article
Date:14 July 2005
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Identification Number:
ValueType
10.1103/PhysRevB.72.041305DOI
Related URLs:
URLURL Type
http://link.aps.org/doi/10.1103/PhysRevB.72.041305Publisher
Classification:
NotationType
73.40.Qv, 71.30.+hPACS
Dewey Decimal Classification:500 Science > 530 Physics
Status:Published
Refereed:Unknown
Created at the University of Regensburg:Unknown
Item ID:11962
Owner only: item control page

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