![]() | PDF (508kB) - Repository staff only |
- DOI to cite this document:
- 10.5283/epub.11963
Alternative links to fulltext:DOI
Abstract
We present a novel technique for fabricating nanometre spaced metal electrodes on a smooth crystal cleavage plane with precisely predetermined spacing. Our method does not require any high-resolution nanolithography tools, all lateral patterning being based on conventional optical lithography. Using molecular beam epitaxy we embedded a thin gallium arsenide (GaAs) layer in between two aluminium ...

Owner only: item control page