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Gerl, Christian ; Tranitz, Hans-Peter ; Wegscheider, Werner ; Mitzkus, Christian ;

Carbon-doped symmetric GaAs/AlGaAs quantum wells with hole mobilities beyond 106 cm2/V s

Gerl, Christian, Tranitz, Hans-Peter , Wegscheider, Werner, Mitzkus, Christian and make_name_string expected hash reference (2005) Carbon-doped symmetric GaAs/AlGaAs quantum wells with hole mobilities beyond 106 cm2/V s. Applied Physics Letters 86 (25), p. 252105.

Date of publication of this fulltext: 11 Jan 2010 13:36
Article
DOI to cite this document: 10.5283/epub.11965


Abstract

Utilizing a carbon filament doping source, we prepared two-dimensional hole gases in a symmetric quantum-well structure in the GaAs/AlGaAs heterosystem. Low-temperature hole mobilities up to 1.2x10(6) cm(2)/V s at a density of 2.3x10(11) cm(-2) were achieved on GaAs (001) substrates. In contrast to electron systems, the hole mobility sensitively depends on variations of the quantum-well width and ...

Utilizing a carbon filament doping source, we prepared two-dimensional hole gases in a symmetric quantum-well structure in the GaAs/AlGaAs heterosystem. Low-temperature hole mobilities up to 1.2x10(6) cm(2)/V s at a density of 2.3x10(11) cm(-2) were achieved on GaAs (001) substrates. In contrast to electron systems, the hole mobility sensitively depends on variations of the quantum-well width and the spacer thickness. In particular, an increase of the quantum-well width from an optimal value of 15 nm to 18 nm is accompanied by a 35% reduction of the hole mobility. The quality of ultrahigh-mobility electron systems is not affected by the employed carbon-doping source. (c) 2005 American Institute of Physics.



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Details

Item typeArticle
Journal or Publication TitleApplied Physics Letters
Publisher:AMER INST PHYSICS
Place of Publication:MELVILLE
Volume:86
Number of Issue or Book Chapter:25
Page Range:p. 252105
Date13 June 2005
InstitutionsPhysics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Identification Number
ValueType
10.1063/1.1949292DOI
Related URLs
URLURL Type
http://link.aip.org/link/?APPLAB/86/252105/1Publisher
Classification
NotationType
81.07.St; 73.63.Hs; 73.40.Kp; 61.72.VvPACS
KeywordsMOLECULAR-BEAM EPITAXY; HIGH LANDAU-LEVELS; HETEROSTRUCTURES; TRANSPORT; GAAS;
Dewey Decimal Classification500 Science > 530 Physics
StatusPublished
RefereedUnknown
Created at the University of RegensburgUnknown
Item ID11965

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