Carbon-doped symmetric GaAs/AlGaAs quantum wells with hole mobilities beyond 106 cm2/V s

DOI to cite this document:: 10.5283/epub.11965

Gerl, Christian ; Tranitz, Hans-Peter

; Wegscheider, Werner ; Mitzkus, Christian ;

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Date of publication of this fulltext: 11 Jan 2010 13:36

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Abstract

Utilizing a carbon filament doping source, we prepared two-dimensional hole gases in a symmetric quantum-well structure in the GaAs/AlGaAs heterosystem. Low-temperature hole mobilities up to 1.2x10(6) cm(2)/V s at a density of 2.3x10(11) cm(-2) were achieved on GaAs (001) substrates. In contrast to electron systems, the hole mobility sensitively depends on variations of the quantum-well width and ...