Go to content
UR Home

Carbon-doped symmetric GaAs/AlGaAs quantum wells with hole mobilities beyond 106 cm2/V s

Gerl, Christian ; Tranitz, Hans-Peter ; Wegscheider, Werner ; Mitzkus, Christian
[img]PDF
(131kB) - Repository staff only
Date of publication of this fulltext: 11 Jan 2010 13:36


Abstract

Utilizing a carbon filament doping source, we prepared two-dimensional hole gases in a symmetric quantum-well structure in the GaAs/AlGaAs heterosystem. Low-temperature hole mobilities up to 1.2×106 cm2/V s at a density of 2.3×1011 cm–2 were achieved on GaAs (001) substrates. In contrast to electron systems, the hole mobility sensitively depends on variations of the quantum-well width and the ...

plus


Owner only: item control page
  1. Homepage UR

University Library

Publication Server

Contact:

Publishing: oa@ur.de

Dissertations: dissertationen@ur.de

Research data: daten@ur.de

Contact persons