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Carbon-doped high-mobility two-dimensional hole gases on (110) faced GaAs

DOI to cite this document:
Schmult, Stefan ; Gerl, Christian ; Wurstbauer, Ursula ; Mitzkus, Christian ; Wegscheider, Werner
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Date of publication of this fulltext: 11 Jan 2010 13:37


Carbon-doped high-mobility two-dimensional hole gases grown on (110) oriented GaAs substrates have been grown with hole mobilities exceeding 106 cm2/Vs in single heterojunction GaAs/AlGaAs structures. At these high mobilities, a pronounced mobility anisotropy has been observed. Rashba induced spin-splitting in these asymmetric structures has been found to be independent on the transport direction.

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