Go to content
UR Home

Carbon-doped high-mobility two-dimensional hole gases on (110) faced GaAs

Schmult, Stefan ; Gerl, Christian ; Wurstbauer, Ursula ; Mitzkus, Christian ; Wegscheider, Werner
[img]PDF
(434kB) - Repository staff only
Date of publication of this fulltext: 11 Jan 2010 13:37


Abstract

Carbon-doped high-mobility two-dimensional hole gases grown on (110) oriented GaAs substrates have been grown with hole mobilities exceeding 106 cm2/Vs in single heterojunction GaAs/AlGaAs structures. At these high mobilities, a pronounced mobility anisotropy has been observed. Rashba induced spin-splitting in these asymmetric structures has been found to be independent on the transport direction.


Owner only: item control page
  1. Homepage UR

University Library

Publication Server

Contact:

Publishing: oa@ur.de

Dissertations: dissertationen@ur.de

Research data: daten@ur.de

Contact persons