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Carbon-doped high-mobility two-dimensional hole gases on (110) faced GaAs
Schmult, Stefan
, Gerl, Christian, Wurstbauer, Ursula , Mitzkus, Christian and Wegscheider, Werner
(2005)
Carbon-doped high-mobility two-dimensional hole gases on (110) faced GaAs.
Applied Physics Letters 86 (20), p. 202105.
Date of publication of this fulltext: 11 Jan 2010 13:37
Article
DOI to cite this document: 10.5283/epub.11966
Abstract
Carbon-doped high-mobility two-dimensional hole gases grown on (110) oriented GaAs substrates have been grown with hole mobilities exceeding 10(6) cm(2)/Vs in single heterojunction GaAs/AlGaAs structures. At these high mobilities, a pronounced mobility anisotropy has been observed. Rashba induced spin-splitting in these asymmetric structures has been found to be independent on the transport direction. (c) 2005 American Institute of Physics.
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| Item type | Article | ||||
| Journal or Publication Title | Applied Physics Letters | ||||
| Publisher: | AMER INST PHYSICS | ||||
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| Place of Publication: | MELVILLE | ||||
| Volume: | 86 | ||||
| Number of Issue or Book Chapter: | 20 | ||||
| Page Range: | p. 202105 | ||||
| Date | 9 May 2005 | ||||
| Institutions | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider | ||||
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| Classification |
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| Keywords | QUANTUM-WELLS; HETEROSTRUCTURES; | ||||
| Dewey Decimal Classification | 500 Science > 530 Physics | ||||
| Status | Published | ||||
| Refereed | Unknown | ||||
| Created at the University of Regensburg | Unknown | ||||
| Item ID | 11966 |
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