Reinwald, Matthias, Wurstbauer, Ursula, Döppe, Matthias, Kipferl, Wolfgang, Wagenhuber, K., Tranitz, Hans-Peter, Weiss, Dieter and Wegscheider, Werner (2005) Growth of (Ga,Mn)As on GaAs(0 0 1) and (3 1 1)A in a high-mobility MBE system. Journal of Crystal Growth 278 (1-4), pp. 690-694.
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Abstract
We demonstrate the possibility to produce both GaAs/AlGaAs heterostructures with high electron mobilities and (Ga,Mn)As by molecular beam epitaxy (MBE) in the same growth chamber. The (Ga,Mn)As samples have been grown on (0 0 1) and (3 1 1)A GaAs substrates and show state of the art quality. Immediately after (Ga,Mn)As growth, two-dimensional electron systems have been produced which show ...
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| Item type: | Article | ||||
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| Date: | 1 May 2005 | ||||
| Institutions: | Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider | ||||
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| Classification: |
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| Keywords: | A3. Molecular beam epitaxy; B1. GaMnAs; B2. Magnetic materials; B2. Semiconducting materials | ||||
| Dewey Decimal Classification: | 500 Science > 530 Physics | ||||
| Status: | Published | ||||
| Refereed: | Unknown | ||||
| Created at the University of Regensburg: | Unknown | ||||
| Item ID: | 11979 |
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