Reinwald, Matthias, Wurstbauer, Ursula, Döppe, Matthias, Kipferl, Wolfgang, Wagenhuber, K., Tranitz, Hans-Peter, Weiss, Dieter und Wegscheider, Werner
Growth of (Ga,Mn)As on GaAs(0 0 1) and (3 1 1)A in a high-mobility MBE system.
Journal of Crystal Growth 278 (1-4), S. 690-694.
Zum Artikel beim Verlag (über DOI)
We demonstrate the possibility to produce both GaAs/AlGaAs heterostructures with high electron mobilities and (Ga,Mn)As by molecular beam epitaxy (MBE) in the same growth chamber. The (Ga,Mn)As samples have been grown on (0 0 1) and (3 1 1)A GaAs substrates and show state of the art quality. Immediately after (Ga,Mn)As growth, two-dimensional electron systems have been produced which show ...
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