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Cheng, J. L. ; Wu, M. W. ; Fabian, Jaroslav

Theory of the Spin Relaxation of Conduction Electrons in Silicon

Article

Cheng, J. L., Wu, M. W. and Fabian, Jaroslav (2010) Theory of the Spin Relaxation of Conduction Electrons in Silicon. Physical Review Letters (PRL) 104 (1), 016601.

DOI to cite this document: 10.5283/epub.12028


Abstract

A realistic pseudopotential model is introduced to investigate the phonon-induced spin relaxation of conduction electrons in bulk silicon. We find a surprisingly subtle interference of the Elliott and Yafet processes affecting the spin relaxation over a wide temperature range, suppressing the significance of the intravalley spin-flip scattering, previously considered dominant, above roughly 120 ...

A realistic pseudopotential model is introduced to investigate the phonon-induced spin relaxation of conduction electrons in bulk silicon. We find a surprisingly subtle interference of the Elliott and Yafet processes affecting the spin relaxation over a wide temperature range, suppressing the significance of the intravalley spin-flip scattering, previously considered dominant, above roughly 120 K. The calculated spin relaxation times T-1 agree with the spin resonance and spin injection data, following a T-3 temperature dependence. The valley anisotropy of T-1 and the spin relaxation rates for hot electrons are predicted.



Involved Institutions


Details

Item typeArticle
Journal or Publication TitlePhysical Review Letters (PRL)
PublisherAMER PHYSICAL SOC
Open Access TypeDue to SHERPA/RoMEO
Place of PublicationCOLLEGE PK
Volume104
Number of Issue or Book Chapter1
Page Range016601
Date4 January 2010
Date of publication13 Jan 2010 16:34
InstitutionsPhysics > Institute of Theroretical Physics > Chair Professor Richter > Group Jaroslav Fabian
Identification Number
ValueType
10.1103/PhysRevLett.104.016601DOI
KeywordsLATTICE RELAXATION; BAND STRUCTURE; SPINTRONICS; DIAMOND;
Dewey Decimal Classification500 Science > 530 Physics
StatusPublished
RefereedYes, this version has been refereed
Created at the University of RegensburgYes
URN of the UB Regensburgurn:nbn:de:bvb:355-epub-120283
Item ID12028

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