Go to content
UR Home

Theory of the Spin Relaxation of Conduction Electrons in Silicon

URN to cite this document:
DOI to cite this document:
Cheng, J. L. ; Wu, M. W. ; Fabian, Jaroslav
PDF - Published Version
Date of publication of this fulltext: 13 Jan 2010 16:34


A realistic pseudopotential model is introduced to investigate the phonon-induced spin relaxation of conduction electrons in bulk silicon. We find a surprisingly subtle interference of the Elliott and Yafet processes affecting the spin relaxation over a wide temperature range, suppressing the significance of the intravalley spin-flip scattering, previously considered dominant, above roughly 120 ...


Owner only: item control page
  1. Homepage UR

University Library

Publication Server


Publishing: oa@ur.de
0941 943 -4239 or -69394

Dissertations: dissertationen@ur.de
0941 943 -3904

Research data: datahub@ur.de
0941 943 -5707

Contact persons