Theory of the Spin Relaxation of Conduction Electrons in Silicon

URN to cite this document:: urn:nbn:de:bvb:355-epub-120283
DOI to cite this document:: 10.5283/epub.12028

Cheng, J. L. ; Wu, M. W. ; Fabian, Jaroslav

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Date of publication of this fulltext: 13 Jan 2010 16:34

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Abstract

A realistic pseudopotential model is introduced to investigate the phonon-induced spin relaxation of conduction electrons in bulk silicon. We find a surprisingly subtle interference of the Elliott and Yafet processes affecting the spin relaxation over a wide temperature range, suppressing the significance of the intravalley spin-flip scattering, previously considered dominant, above roughly 120 ...