Go to content
UR Home

Theory of the Spin Relaxation of Conduction Electrons in Silicon

Cheng, J. L., Wu, M. W. and Fabian, Jaroslav (2010) Theory of the Spin Relaxation of Conduction Electrons in Silicon. Physical Review Letters (PRL) 104 (1), 016601.

PDF - Published Version
Download (1MB)
Date of publication of this fulltext: 13 Jan 2010 16:34

at publisher (via DOI)

Other URL: http://link.aps.org/doi/10.1103/PhysRevLett.104.016601


A realistic pseudopotential model is introduced to investigate the phonon-induced spin relaxation of conduction electrons in bulk silicon. We find a surprisingly subtle interference of the Elliott and Yafet processes affecting the spin relaxation over a wide temperature range, suppressing the significance of the intravalley spin-flip scattering, previously considered dominant, above roughly 120 ...


Export bibliographical data

Item type:Article
Date:4 January 2010
Institutions:Physics > Institute of Theroretical Physics > Chair Professor Richter > Group Jaroslav Fabian
Projects:SPP 1285: Halbleiter Spintronik
Identification Number:
Dewey Decimal Classification:500 Science > 530 Physics
Refereed:Yes, this version has been refereed
Created at the University of Regensburg:Yes
Item ID:12028
Owner only: item control page


Downloads per month over past year

  1. Homepage UR

University Library

Publication Server


Publishing: oa@ur.de

Dissertations: dissertationen@ur.de

Research data: daten@ur.de

Contact persons