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Long range strain and electrical potential induced by single edge dislocations in GaN

Gmeinwieser, Nikolaus, Gottfriedsen, P., Schwarz, Ulrich, Wegscheider, Werner, Clos, R., Krtschil, A., Krost, A., Engl, Karl, Weimar, A., Brüderl, G., Lell, Alfred and Härle, Volker (2006) Long range strain and electrical potential induced by single edge dislocations in GaN. Physica B Condensed Matter 376-37, pp. 451-454.

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A dipole like strain state is induced by threading edge dislocations emerging at the surface of gallium nitride (GaN) bulk substrates. This local strain is calculated by means of a three-dimensional elastic deformation potential model, taking into account the free surface of the sample. The calculations are in excellent quantitative agreement with the strain state derived from line shifts of the ...


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Item type:Article
Date:1 April 2006
Institutions:Physics > Institute of Experimental and Applied Physics > Alumni or Retired Professors > Group Werner Wegscheider
Identification Number:
78.55.Cr; 61.72.Ff; 68.35.Gy; 73.20.At; 73.20.HbPACS
Keywords:GaN; Dislocation; Strain; Potential
Dewey Decimal Classification:500 Science > 530 Physics
Created at the University of Regensburg:Unknown
Item ID:12180
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