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Long range strain and electrical potential induced by single edge dislocations in GaN

DOI to cite this document:
Gmeinwieser, Nikolaus ; Gottfriedsen, P. ; Schwarz, Ulrich ; Wegscheider, Werner ; Clos, R. ; Krtschil, A. ; Krost, A. ; Engl, Karl ; Weimar, A. ; Brüderl, G. ; Lell, Alfred ; Härle, Volker
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Date of publication of this fulltext: 25 Jan 2010 13:09


A dipole like strain state is induced by threading edge dislocations emerging at the surface of gallium nitride (GaN) bulk substrates. This local strain is calculated by means of a three-dimensional elastic deformation potential model, taking into account the free surface of the sample. The calculations are in excellent quantitative agreement with the strain state derived from line shifts of the ...


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